TRANSISTOR 9A Search Results

CC5401

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.

NCC 5551

Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5551 9AW TO-92 BCE MARKING : NCC 5551 High Voltage NPN Transistor for General Purpose and Telephony Applications

ZXTN19020DG

Abstract: TS16949 ZXTN19020DGTA ZXTP19020DG
Contextual Info: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

MARKING W1 AD

Abstract: CC5401
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

microwave amplifier 2.4 ghz 10 watts

Abstract: 2223 2223-9A transistor Common Base amplifier
Contextual Info: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

Contextual Info: O rder th is data sheet MOTOROLA b y M SD1819A-RT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon G eneral Purpose A m plifier Transistor MSD1819A-RT1 MSD18 1 9A-ST1 M o to r o la P re fe rre d D e v ic e s This NPN Silicon Epitaxial Planar Transistor is designed for general purpose

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

PMMT491A

Abstract: PMMT591A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMMT491A NPN BISS transistor Product specification Supersedes data of 2001 Jun 11 2004 Jan 13 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A PIN • Low collector-emitter saturation voltage ensures

NTE2301

Contextual Info: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages

HEMT 36 ghz transistor

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

TO-98

Abstract: transistor MPSA06 NPN Transistor TO92 2N3391A 2N3904 TO-92 type transistor 2n3903 2N2924 ges3 2N2926-5 2N3390
Contextual Info: - THOriSON/ DISTRIBUTOR SñE D m T05t,ñ?3 0005737 • TCSK Discrete Transistors Small-Signal Bipolar Transistors In O rder of Ascending I q NPN Signal Transistor Selector Guide NPN Signal Transistor Selector Guide (M ax.) In A v (BR)CEO (M in.)

in 3003 TRANSISTOR

Abstract: TR5 fuse s118 diode TOS-508-S118-95 S1-18 3003 transistor
Contextual Info: TOS - Series Transistor-, TO-Sockets & Fuse Holders Sockets for TO-5 and TO-18 packages. 3-pole for transistors and 2-pole TR-5 Fuse Holders shown on this page. Embedded terminals prevent shortings. High contact reliability with the 4-finger clips. Transistor- & TO-Sockets

Contextual Info: DISCRETE SEMICONDUCTORS DAT PMMT491A NPN BISS transistor Product data sheet Supersedes data of 2001 Jun 11 2004 Jan 13 NXP Semiconductors Product data sheet NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A PIN • Low collector-emitter saturation voltage ensures

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bb 53 T 31 DDBDblS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Transistor Array

Abstract: 6a transistor A3018 Transistor 9A transistor military "transistor array" a3045 A726 MA3046 Darlington Transistor low noise
Contextual Info: FAIRCHILD INTERFACE SPECIAL FUNCTIONS Wideband Switching Application 1 mA726 te m p Controlled Diff Pair • • • — — — — 40 30 5.0 5.0 2 mA3018 Matched Transistor Array • • — • • • — 20 15 5.0 50 — 3 mA3018A Matched Transistor Array

ksd 202

Abstract: marking EB 202 diode STA9012SF STC9013SF
Contextual Info: STA9012SF Semiconductor PNP Silicon Transistor Description • General purpose application • Switching application Features • Excellent hFE linearity • Complementary pair with STC9013SF Ordering Information Type NO. Marking Package Code STA9012SF 9A□