TRANSISTOR 9707 Search Results

TRANSISTOR SOT23

Abstract: BCW31 BCW32 transistor
Contextual Info: 970714 01 SIDA: 1/6 ELFA artikelnr. 71-310-63 BCW31 transistor SOT23 71-310-71 BCW32 transistor SOT23 970714 01 SIDA: 2/6 970714 01 SIDA: 3/6 970714 01 SIDA: 4/6 970714 01 SIDA: 5/6 970714 01 SIDA: 6/6

diode 400V 4A

Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRF1010

Abstract: 8A2021
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

diode 400V 4A

Abstract: IRF1010 diode 4A 400v ultra fast
Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

IRGB4060D

Abstract: IRF1010 CT4-15
Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA

Contextual Info: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

2SA1723

Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
Contextual Info: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7

Contextual Info: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r

scientific imaging technologies

Abstract: SI-003A mpp schematic infrared diode p1d scientific imaging technologies inc ccd incoming inspection SI-424A
Contextual Info: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV

scientific imaging technologies

Abstract: SI-003A SIA003A AD590 mpp schematic scientific imaging technologies inc ccd incoming inspection SI003
Contextual Info: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 1024 x 1024 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Packaged with a two stage Thermoelectric cooler for improved performance without a dewar

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

scientific imaging technologies

Abstract: scientific imaging technologies inc ST-002A ccd 15um AD590 APPLICATIONS mpp schematic TRANSISTOR S2A AD590 image sensor x-ray focal plane array pin
Contextual Info: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 2048 x 4096 pixel format 15µm square n Front-illuminated or thinned, back-illuminated versions n Three side buttability to facilitate large mosaic focal planes n Special packaging to facilitate mosaic layouts

Contextual Info: HIGH RESOLUTION OPTICAL REFLECTIVE SENSOR H B C S T E C H N IC A L D A T A -1 1 0 0 N O V E M B E R 1984 Features « FOCUSED EMITTER AND DETECTOR IN A SING LE PACKAGE • H IG H RESO LU TIO N — .190mm SPOT SIZE • 700nm VISIBLE EM ITTER • LENS FILTERED TO REJECT A M B IENT LIG H T

SI-502A

Abstract: scientific imaging technologies SI-424 SI-502 scientific imaging technologies inc Scientific Imaging Technologies, Inc mpp schematic SI-424A ccd 512 x 512
Contextual Info: S C I E N T I F I C I M A G I N G T E C H N O L O G I E S , I N C . 512 x 512 pixel format 24µm square n Front-illuminated or thinned, back-illuminated versions n Unique thinning and Quantum Efficiency enhancement processes n Excellent QE from IR to UV

Dotmatrix

Abstract: 14 pin hd44780 display
Contextual Info: EA 9707-V24S 8.2001 RS-232C INTERFACE FÜR DOTMATRIX LCD Zubehör: EA KV24-9B Abmessungen 80x32 mm TECHNISCHE DATEN * * * * * * * * * * * * FÜR ALLE DOTMATRIX: 1x8 . 1x16 . 2x16 . 4x16 . 4x20 einschließlich 4x40 VERSORGUNGSSPANNUNG 5V/5mA ODER 9.35V OPTIONAL