TRANSISTOR 8522 Search Results

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

JLN 2003

Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

Contextual Info: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling

2SA1646

Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

2SA1646

Abstract: 2SA1646-Z NEW TRANSISTOR
Contextual Info: Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Jul 01, 2010 Silicon Power Transistor Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-toemitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,

Contextual Info: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSD42WT1 NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier

IN5817 schottky diode symbol

Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

B0159

Contextual Info: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR

marking sop-12

Abstract: 2N2222 TRANSISTOR TOSHIBA
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

h2d transistor

Contextual Info: MOTOROLA Order this document by MSB92W T1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSB92WT1 PN P Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This PNP Silicon Planar Transistor is designed for general purpose amplifier

Contextual Info: Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP180N055

Abstract: NP180N055TUJ
Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP180N04TUJ

Abstract: TO-263-7pin
Contextual Info: Preliminary Data Sheet NP180N04TUJ R07DS0180EJ0100 Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

Contextual Info: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP160N04TUJ

Contextual Info: Preliminary Data Sheet NP160N04TUJ R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP33N075YDF

Contextual Info: Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 Jun 30, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

NP109N04PUK

Contextual Info: Preliminary Data Sheet NP109N04PUK R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP160N04TUK R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

Contextual Info: Preliminary Data Sheet NP50P04SLG R07DS0241EJ0100 Rev.1.00 Feb 09, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance

NP55N04SLG

Abstract: NP55N04SLG-E2-AY NP55N04SLG-E1-AY
Contextual Info: Preliminary Data Sheet NP55N04SLG R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating

Contextual Info: Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100 Rev.1.00 Nov 07, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance