TRANSISTOR 721 Search Results

marking 721

Abstract: BF720 BF721
Contextual Info: BF721 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF721 721 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BF720

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

philips ferrite material specifications

Abstract: BD239 BY239 LXE15450X SC15 mlc444
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating

2SC4548

Contextual Info: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

2SB1431

Contextual Info: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63(' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

transistor 2SC5288

Abstract: 74267 2SC5288 47828 IC 7443 datasheet ic 9435 MU 350 2SC5192 2SC5288-T1 2SC5289
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

BFG34

Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Contextual Info: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband

nec 3012

Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

Contextual Info: SS9011 NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9011 AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LB1274

Contextual Info: Ordering number:ENN535C Monolithic Digital IC LB1274 6-Unit, Darlington Transistor Array Overview Package Dimensions Circuit structure of this IC is a 6-unit Darlington transistor array with NPN transistors. The IC is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages when designing circuits

20258

Abstract: IEC-68-2-54 1301P
Contextual Info: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 SbE ]> • 7 1 1 0 fl5 b O O M 4 S 7 T 137 « P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

LB1272

Abstract: diode 7836 783B 3003a power transistor VJN-35V
Contextual Info: Ordering number: EN 7838 SA\YO LB 1272 N0.783B M o n o lith ic D ig it a l IC i 6-Unit, Darlington Transistor Array X The circuit configuration of this IC is a 6-unit Darlington transistor array cons^tfihg oy|?N Y ^ ^ s t o r s ^ ^ is ideally suited for use in printer hammer driving, lamp or relay driving ap p licatid ^

Contextual Info: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 2N-721S JANTXSN7S18 JANTXV2N7218 N-CHANNEL [REF: MIL-S-19SOO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: 50A02CH Ordering number : EN7487B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 50A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit

MMT807

Abstract: MMT809
Contextual Info: MMT807 silicon M IC R O M IN IA T U R E NPN SILICON A M PLIFIER TRANSISTOR NPN SILICON A N N U LA R TRANSISTOR MICRO POWER SERIES . . designed fo r h ig h -fre q u e n c y , lo w *p o w e r a m p lifie r a p p lic a tio n s . D C C u rre n t G a in @ U ltr a L o w C u r r e n t —