MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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o-92spo-237o-220o-928+6io051mje29552n3645bc557bc307bc212
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2N7002x
Abstract: transistor SOT23 1d 2N7002M
Contextual Info: ALPHA SEMICONDUCTOR 2N7002 E xcellence in A n alo g Pow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A L PH A S em iconductor’s 2N 7002 device is a vertical D M O S FE T transistor housed in a surface m ount SO T-23 for m icro
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2n70022n7002m2n7002xot-23+1transistor sot23 1d
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K1150PG
Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Contextual Info: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%
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4n27/284n25/26tcdt11104n32/33+16cny74mct6h/62hk827phk825pk824pk845pk1150pgk1150pg opto coupleropto coupler 4n35 datasheetopto coupler 4n33darlington opto coupleropto coupler 4n35purpose of opto coupler 4n354 channel triac optox1 transistork1150p
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TLP721F
Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP721F TLP721F OFFICE MACHINE. U nit in mm SWITCHING POWER SUPPLY. The TOSHIBA TLP721F consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic DIP package. All param eters are tested to the specification of TLP721.
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tlp721ftlp721ul1577e67349+4bs415ss4330784vde0884vde0804
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convertisseur de 12v -220v
Abstract: porte logique porte logique and ttl 7004 TRANSISTOR BIPOLAIRE IC Ensemble
Contextual Info: SF.T SF.T SF.T SF.T F.E.T. ANALOGIC GATES PORTES AN ALO G IQ UES A TRANSISTORS A EFFET DE CHAMP These silicon devices are constituted by : Ces dispositifs, eu siliciu m s o nt composés : • a field-effect transistor N channel - d ’un transistor à e ffe t de cham p canal N
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convertisseur de 12v -220vporte logiqueporte logique andttl 7004+2transistor bipolaireic ensemble
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702 sot 23
Abstract: transistor marking 7002
Contextual Info: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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2n7002ot-23200ma702 sot 23+1transistor marking 7002
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2SD2600
Contextual Info: 2SD2600 Ordering number : EN8564 SANYO Semiconductors DATA SHEET 2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features
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2sd2600en8564 |
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TA-1083
Abstract: 2SB1664
Contextual Info: 2SB1664 Ordering number : EN8528 SANYO Semiconductors DATA SHEET 2SB1664 PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • •
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2N7002LT1
Contextual Info: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m
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N7002LT1
Abstract: 2N7002LT1 N7002LT
Contextual Info: TRANSYS 2N 7002LT1 mCTKONICS t LIMITED 3 DRAIN FET Transistor N-Channel Enhancement MAXIMUM RATINGS 2 Rating Symbol Value Unit VDSS 60 Vdc V d GR 60 Vdc id mAdc Id m ±115 ±75 ±800 Vg s Vg s m ±20 ±40 Vdc Vpk Drain-Source Voltage Drain-Gate Voltage R q s = 1
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n7002lt12n7002lt1ot-23n7002lt |
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smd transistor 7002
Abstract: smd 7002 marking code sSG SOT23
Contextual Info: SN 7002 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level • W = ° - 8- 2-0V Type Vqs b ^DS on) Package Marking SN 7002 60 V 0.19 A 5Q SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 Tape and Reel Information
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ot-23q67000-s063e6327s35bq5+9q133777sqt-89b535bq5d13377b235bg5d13377tsmd transistor 7002smd 7002marking code ssg sot23
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MARKING SSG SOT23
Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002
Contextual Info: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
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ot-23q67000-s063e6327marking ssg sot23+2sn7002sot-23 marking 7002
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MARKING SSG SOT23
Abstract: 7002 MARKING 7002 SSG 23 TRANSISTOR SN7002 E6327 Q67000-S063 SOT-23 marking HG sot23 7002 transistor marking 7002
Contextual Info: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information
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ot-23q67000-s063e6327sep-13-1996+8marking ssg sot237002marking 7002ssg 23 transistorsn7002sot-23 marking hgsot23 7002transistor marking 7002
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MARKING SSG SOT23
Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23
Contextual Info: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063
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ot-23q67000-s063e6327gps05557+4marking ssg sot23transistor marking 7002transistor 7002marking code ssg sot23
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2N7000
Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
Contextual Info: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2n70002n7002nds7002a400ma+52n7002a2n7007002afe -2n7002on semiconductor" 2n7002
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2N7002PT
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 * Rugged and reliable.
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7002N
Abstract: 2N7000 S7002
Contextual Info: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2n70002n7002nds7002a400ma+32n7002a7002ns7002
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dc7002n
Contextual Info: SEM IC ONDUCTO R tm NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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NDS7002A
Abstract: e05a 2N7000 2N7002 C1995 NDF7000A national 2N7002 sot23 7002
Contextual Info: 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been
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2n70002n7002ndf7000ands7002a+4e05ac1995national 2n7002sot23 7002
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Darlington transistor to 92
Abstract: N50 DIODE
Contextual Info: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P DESCRIPTION T h e Integrated Telecom Circuit series com bines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications.
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itc117p/itc135p/itc137pitc117p/itc135p/1tc137pdarlington transistor to 92n50 diode |
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N7000
Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been
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2n7000/2n7002/ndf7000a/nds7002a81-043-299-240bbsd1130n7000+92n7000 mosfetcj ndf7000asfs sot23mosfet 2n70002n70002n7002ndf7000ands7002a7002 transistor sm
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NDS7002A
Contextual Info: March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology. These products have been
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