TRANSISTOR 6C Search Results

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

6r950c6

Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6

MUN5111T1

Abstract: MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5114T1G MUN5115T1G MUN5116T1G
Contextual Info: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias

transistor 6R385P

Abstract: 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

6r600e6

Abstract: infineon marking TO-252 E6 DIODE IPD60R600E6 IPA60R600E6 diode smd E6 JESD22 infineon Diode SMD SJ 19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPD60R600E6, IPP60R600E6

6R199P

Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description

65E6280

Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

6r950c6

Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

bf 194 pin configuration

Abstract: BA12004B BA12001 BA12001B BA12003B BA12003BF Seven Transistor Array PNP cmos open collector array 7ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

transistor bf 425

Abstract: Seven Transistor Array PNP BA12004B pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array BF 194 pin bf 194 pin configuration PNP DARLINGTON SINK DRIVER 500ma seven transistors PNP drivers BA12001B
Contextual Info: BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor

15002

Abstract: Transistor BC817 transistor 6D sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC817 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 12 1999 Jun 01 Philips Semiconductors Product specification NPN general purpose transistor BC817 FEATURES PINNING

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product specification Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING

Transistor 8fc

Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
Contextual Info: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations

ULN2003

Contextual Info: ULN2001ATHRU ULN2004A DARLINGTON TRANSISTOR ARRAYS SLRS027 - DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS 500-mA Rated Collector Current Single Output High-Voltage Outputs. ,50 V D OR N PACKAGE (TOP VIEW) 1B[

MUN2111T1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V

Contextual Info: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

RN4983FE

Contextual Info: RN4983FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4983FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

BC817-40

Abstract: BC807 BC817 BC817-16 BC817-25 marking 6b philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BC817 NPN general purpose transistor Product specification Supersedes data of 1999 Jun 01 2004 Jan 05 Philips Semiconductors Product specification NPN general purpose transistor BC817 PINNING FEATURES • Collector current capability IC = 500 mA

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single 3

d2625

Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
Contextual Info: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes