TRANSISTOR 62 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION

Contextual Info: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

STC2222

Contextual Info: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage: Vces = 30V *Collector Dissipation : Pc mas = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )

transistor sc 308

Abstract: DTA143EE SMD310
Contextual Info: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

DTC114TE

Abstract: SMD310 motorola DTC114TE
Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a

transistor sc 308

Abstract: DTC114TE SMD310
Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

DTC114YE

Abstract: SMD310 motorola DTC114YE
Contextual Info: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a

2SC3603

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

DTA143EE

Abstract: SMD310 43 DTA143EE
Contextual Info: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

DTA114YE

Abstract: SMD310
Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic

BFX62

Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Contextual Info: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.

transistor sc 308

Abstract: DTA114YE SMD310
Contextual Info: ON Semiconductort DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

transistor marking DG

Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Contextual Info: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one

Mitsubishi M54564

Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide

pin configuration transistor 2n4403

Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
Contextual Info: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.

2N4401 NATIONAL SEMICONDUCTOR

Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
Contextual Info: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.

pin configuration NPN transistor 2n3906

Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
Contextual Info: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.

TO-92 VCEO400V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number

PZTA94G-AA3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage „ ORDERING INFORMATION Ordering Number

Contextual Info: UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: VM8=20V • Collector Dissipation: Pc max >625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92