TRANSISTOR 62 Search Results
TRANSISTOR 62 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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| 27S185DM/B |
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27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 |
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TRANSISTOR 62 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
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transistor
Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
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2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW ORDERING INFORMATION |
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MPSA14 MPSA14 625mW MPSA14L-AB3-R MPSA14G-AB3-R MPSA14L-T92-K MPSA14G-T92-K MPSA14L-T92-B MPSA14G-T92-B OT-89 | |
transistor collector diode protection
Abstract: marking 720 transistor
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DTDG14GP SC-62) DTDG14GP; DTDG14GP transistor collector diode protection marking 720 transistor | |
2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
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O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 | |
MPSA13
Abstract: utc mpsa13
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MPSA13 OT-89 QW-R208-001 utc mpsa13 | |
MPSA13
Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13
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MPSA13 OT-89 100ms QW-R208-001 vbe 10v, vce 5v NPN Transistor utc mpsa13 | |
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Contextual Info: STC2907A PNP Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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STC2907A 625mW | |
npn transistor 433 Mhz
Abstract: S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170
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MPSA06 MPSA56 100mA, 100mA 100MHz npn transistor 433 Mhz S 170 TRANSISTOR transistor 625 MPSA06 MPSA56 12G-V transistor cb 170 | |
STC2222Contextual Info: STC2222A NPN Silicon Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC max =625mW • Refer STC2222 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
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STC2222A 625mW STC2222 | |
equivalent mpsa14
Abstract: MPSa14 equivalent MPSA14 transistor darlington
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MPSA14 OT-89 QW-R208-008 equivalent mpsa14 MPSa14 equivalent transistor darlington | |
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Contextual Info: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage: Vces = 30V *Collector Dissipation : Pc mas = 625 mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) |
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MMBTA13 MMBTA13 OT-23 100mA 100mA 100MHz | |
MPSA113
Abstract: transistor darlington
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MPSA113 OT-89 QW-R208-009 transistor darlington | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA143EE 416/SC | |
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6aa markingContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic |
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DTA114YE 416/SC 6aa marking | |
transistor sc 308
Abstract: DTA143EE SMD310
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DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 | |
nec 620
Abstract: 2SD1582 hFE transistor high hfe transistor
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2SD1582 2SD1582 nec 620 hFE transistor high hfe transistor | |
DTC114TE
Abstract: SMD310 motorola DTC114TE
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DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE | |
transistor sc 308
Abstract: DTC114TE SMD310
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DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 | |
DTC114YE
Abstract: SMD310 motorola DTC114YE
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DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE | |
2SC3603Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise |
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2SC3603 2SC3603 | |
DTA143EE
Abstract: SMD310 43 DTA143EE
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DTA143EE/D DTA143EE 416/SC DTA143EE/D* DTA143EE SMD310 43 DTA143EE | |
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Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise |
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2SC3603 2SC3603 | |
DTA114YE
Abstract: SMD310
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DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 | |