TRANSISTOR 60 VOLT Search Results

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA27. N E K G J D RATING UNIT VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500

Contextual Info: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is

transistor SMD P2F

Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
Contextual Info: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage

1920AB60

Abstract: max6011
Contextual Info: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS

1920CD60

Abstract: 55SW
Contextual Info: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS

PBSS5160T

Abstract: bcp52 replacement BCP52 BCX52 PBSS4160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 23 2004 May 27 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor

1819CD60

Contextual Info: 1819CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1805 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1805-1880 MHz. This transistor is specifically designed for LINEAR PERSONAL PCN CDMA

1g marking

Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage

Contextual Info: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage

NTE359

Abstract: 8-32N
Contextual Info: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST05/06 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C /W V cbO : KST05 : KST06 C ollector-E m ltter Voltage

Contextual Info: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V 80 V

2N2945

Abstract: 2N2946A jan 2n5582 2N2604 2N2605 2N2946 2N3485 2N3486 TO46 new england semiconductor transistors
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I 1H VcEO DEVICE sus TYPE VOLTS 2N2604 45 2N2605 45 2N2944AA 10 2N2945 20 2N2945AA 20 2N2946 35 2N2946AA 35 2N3485 40 2N3485AA 60 2N3486 40 2N3486AA 60 2N3764A 40 2N3765A 60

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

2sa1154

Abstract: 2SC2721
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V

MMBTA05

Abstract: MMBTA55 driver transistor hfe 60
Contextual Info: SEMICONDUCTOR MMBTA05 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES E B L L Complementary to MMBTA55. H UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V

1415 ic

Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and

2N2905

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Symbol : KSB794 Rating Unit V cbO - 60 V VcBO - 80 V VcEO - 60 V VcEO

Ob110

Abstract: CXT2907A
Contextual Info: Transistors SMD Type Surface Mount PNP Switching Transistor CXT2907A Features High current max.600mA Low voltage (max.60V) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60

Contextual Info: PZT156 NPN Transistor Elektronische Bauelemente Silicon Planar High Performance Transistor RoHS Compliant Product SOT-223 Description The PZT156 is designed for general purpose switching and amplifier applications. Features * 3 Amps Continous Current * 60 Volt VCEO

ESCC 5207-005

Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

PTB 20200

Contextual Info: e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier