TRANSISTOR 60 VOLT Search Results

c 1685 transistor

Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Contextual Info: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors

sot23 mark code CB

Abstract: la marking
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Rating Unit 60 60 V V V V ebo lc Pc T sto 60 80 4 500 350 150 Rm (i-a) 357 C haracteristic Sym bol Collector Base Voltage VcBO :KST0S :KST06 Collector-Em itter Voltage

KSP55

Abstract: KSP56 PNP EPITAXIAL SILICON TRANSISTOR 60V
Contextual Info: KSP55/56 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=KSP55: 60V KSP56: 80V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Symbol Rating Unit -60 -80 V V -60 -80

Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ・Complementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25℃ RATING UNIT VCBO -60 V Collector-Base Voltage H F Collector-Emitter Voltage VCES -60

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA27 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA77. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage

MPSA27

Abstract: MPSA77 MPS-A27
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A ᴌComplementary to MPSA27. N E K G J D MAXIMUM RATINGS Ta=25ᴱ UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage

MPSA27

Abstract: MPSA77
Contextual Info: SEMICONDUCTOR MPSA77 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DARLINGTON TRANSISTOR B C FEATURES A Complementary to MPSA27. N E K G J D RATING UNIT VCBO -60 V Collector-Emitter Voltage VCES -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500

Contextual Info: MPSA05 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCeo=60V TO -92 • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO 60 60 4 500 625 150 -5 5 -1 5 0

Contextual Info: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is

Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - JUNE 94_ FEATURES * * 60 Volt VCE0 Gain of 10k at lc=100mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT v CBO -60 V Collector-Em itter Voltage v CEO -60

BD439

Abstract: BD441 60V transistor npn 2a transistor BD441 60V transistor npn 2a switching applications BD440 BD442
Contextual Info: BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD439 Rating Unit 60 V 80 V 60 V 80 V 60 V

transistor SMD P2F

Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
Contextual Info: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage

1920AB60

Abstract: max6011
Contextual Info: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS

1920CD60

Abstract: 55SW
Contextual Info: 1920CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS

KST55

Abstract: 2H2G mark 2H SOT-23 KSP55 KST56
Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -80 V V VEBO IC PC T STG -60 -80 -4 -500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST55 :KST56

free transistor equivalent book

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA

PBSS5160T

Abstract: bcp52 replacement BCP52 BCX52 PBSS4160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V, 1 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 23 2004 May 27 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor

PBSS4160T

Abstract: BCP55 BCX55 PBSS5160T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2004 May 12 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor

free transistor equivalent book

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V; 1 A PNP low VCEsat BISS transistor Product specification 2003 Jun 23 Philips Semiconductors Product specification 60 V; 1 A PNP low VCEsat (BISS) transistor PBSS5160T FEATURES QUICK REFERENCE DATA

1819CD60

Contextual Info: 1819CD60 60 Watts PEP, 25 Volts, Class AB CDMA Personal 1805 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819CD60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1805-1880 MHz. This transistor is specifically designed for LINEAR PERSONAL PCN CDMA

2g marking code

Abstract: KSP55 KST55 KST56 2H2G
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST55/56 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage Rating Unit -60 -80 V -60 -80 -4 -500 350 150 V mA mW °C 357 °C /W VcBO : KST55 : KST56 C ollector-E m itter Voltage

1g marking

Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C/W V cB O : KST05 : KST06 Collector-Emitter Voltage

Contextual Info: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage

KST05

Abstract: KSP05 KST06
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage