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    TRANSISTOR 5W Search Results

    TRANSISTOR 5W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR 5W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CTA4100A

    Contextual Info: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor


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    cta4000a240vaccta4000d24vdc+4cta4100acta4100d12vdc100ma PDF

    NEC 2sc4552

    Abstract: 2SC4552
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2sc4552nec 2sc4552 PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j PDF

    D1316

    Abstract: 2SA1744
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


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    2sa1744d1316 PDF

    2SC4551

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2sc4551 PDF

    2SC4815

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4815 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4815 is a power transistor developed for high-speed switching and features low VCE sat and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators.


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    2sc4815 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    b 595 transistor

    Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
    Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    ph31355m15-j3b 595 transistormallory capacitor+7transistor b 595j3 transistortransistor 15j30rogers 6010.5ph3135-5melectrolytic mallory capacitormicrowave test fixture PDF

    transistor power 5w

    Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
    Contextual Info: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System


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    ph2323-5transistor power 5wtransistor 5503transistor 1271+7silicon npn power transistor c 869d 595 transistortransistor j172052-5636-02transistor c 1344transistor common base configurationj170 PDF

    2SC4553

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a


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    2sc4553 PDF

    TRANSISTOR ZFW

    Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
    Contextual Info: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    ph2731-5m40-j12tt50m50a7transistor zfw+8zfw 03capacitor malloryzfw transistortransistor 5wtransistor j18tt50m50atransistor power 5wtransistor 335 PDF

    882 transistor

    Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
    Contextual Info: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors


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    ph2323-5882 transistoromni spectra smatransistor power rating 5w+4transistor 882atc100amallory 25 uf capacitor data sheetomni spectra fixture PDF

    Contextual Info: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


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    mh8100f300/xs PDF

    MICRO ELECTRONICS ltd transistor

    Contextual Info: CRO MH8100F NPN SILICON POWER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage VBE=0


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    mh8100fmay-96micro electronics ltd transistor PDF

    2SC3570

    Abstract: D1618
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm voltage high-speed switching, and is ideal for use in drivers such as


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    2sc3570d1618 PDF

    MH8100F

    Contextual Info: MH8100F NPN SILICON POW ER TRANSISTOR D ESC RIPTIO N MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE M AXIM UM RATINGS Collector-Emitter Voltage V BE=0


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    mh8100fmay-96 PDF

    transistor tic 106

    Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
    Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.


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    bcy6660203-ytransistor tic 106af200+6transistor tic 106 ntic 105q60203-y66tic 246 htic 246tic 245 PDF

    transistor c655

    Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
    Contextual Info: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    100jisph2931-5matc100atransistor c655+79225 npn transistorrf npn power transistor 3 ghz 5wtransistor power rating 5wtransistor a52c65513mmtt50 PDF

    transistor 1005 oj

    Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
    Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry


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    ph3135-5satc100atransistor 1005 ojtransistor power rating 5w+1pin07 PDF

    RF NPN POWER TRANSISTOR 3 GHZ 5w

    Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry


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    ph3135-5stt50m50aatc100arf npn power transistor 3 ghz 5w PDF

    MPSA92

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


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    mpsa92mpsa92/93-300v-200v+2mpsa93625mw PDF

    MPSA92

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


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    mpsa92mpsa92/93-300v-200v+3mpsa93625mwot-89 PDF

    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage:


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    mpsa92mpsa92/93-300v-200v+2mpsa93625mw PDF

    MPSA92

    Abstract: MPS-A92
    Contextual Info: UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. 1 FEATURES * High Collector-Emitter voltage:


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    mpsa92mpsa92/93-300v-200v+4mpsa93625mwot-89mps-a92 PDF