TRANSISTOR 526 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Transistor SSI 5504 175

Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

BFQ23C

Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
Contextual Info: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features

BUS48AP

Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2N4115

Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP

MM5262

Contextual Info: M M 5262 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON HIGH CURRENT AMPLIFIER AND CORE DRIVER TRANSISTOR . . . designed fo r use in high -current, high-speed c u rre n t s w itchin g and core d riv e r a pp lications. • C o lle c to r-E m itte r B reakd ow n V oltage —

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BFP91A

Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Contextual Info: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

transistor EB 525

Abstract: TRANSISTOR 4148 ic 4148 5262n din 4148 N 4148 41873 CCB030 2N4036
Contextual Info: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: General Besondere Merkmale: Features: • • • Hohe Sperrspannung • Verlustleistung 7 W High reverse voltage Power dissipation 7 W Abmessungen in mm

BU108

Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:

diode sy 170

Abstract: diode sy-170
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. Tne device is Intended for use In