TRANSISTOR 5200 Search Results

TRANSISTOR 5200 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)	Datasheet
BLA1011-2	Rochester Electronics LLC	Avionics LDMOS transistor	PDF
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor	PDF
CA3127MZ	Rochester Electronics LLC	CA3127 - Transistor Array	PDF
RX1214B130YI	Rochester Electronics LLC	NPN microwave power transistor	PDF

TRANSISTOR 5200 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
18P4G Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array" Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP	Original	M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"	PDF
Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit	Original	500mA M54562WP 500mA) Jul-2011	PDF
pnp DARLINGTON TRANSISTOR ARRAY Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode Contextual Info: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit	Original	M54562WP 500mA M54562WP 500mA) Jul-2011 pnp DARLINGTON TRANSISTOR ARRAY 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode	PDF
DARLINGTON TRANSISTOR ARRAY Contextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high	Original	M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY	PDF
M54562FP Contextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high	Original	M54562FP 500mA M54562FP 500mA)	PDF
pnp 8 transistor array Abstract: M54562P pnp darlington array 18P4G 20P2N-A M54562FP PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.	Original	M54562P/FP 500mA M54562P M54562FP 500mA) pnp 8 transistor array pnp darlington array 18P4G 20P2N-A PNP DARLINGTON ARRAYS npn 8 transistor array Darlington Transistor Array	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
BUK9508-55 Abstract: BUK9608-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 BUK9608-55 BUK9508-55 BUK9608-55	PDF
BUK9508-55 Abstract: PHB125N06LT 4100us Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us	PDF
buk9508 Abstract: BUK9508-55 BUK9608-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 BUK9608-55 buk9508 BUK9508-55 BUK9608-55	PDF
45118 Abstract: TRANSISTOR SMD MARKING CODE RG F/45118 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118	PDF
transistor AHs Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	OCR Scan	BUK9608-55 transistor AHs	PDF
transistor D 982 Abstract: gis 110 kv Contextual Info: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very	OCR Scan	BUK9508-55 T0220AB transistor D 982 gis 110 kv	PDF
LTE42005S Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent	Original	LTE42005S OT440A LTE42005S	PDF

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	OCR Scan	BUK9508-55 T0220AB	PDF
d1310 Abstract: 2SK3061 A2087 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3061 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching applications.	Original	2SK3061 2SK3061 O-220 O-220) O-220 d1310 A2087	PDF
2SK3061 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3061 Isolated TO-220 designed for high current switching application.	Original	2SK3061 O-220 O-220 2SK3061	PDF
BUK950 Abstract: BUK9508-55 BUK9508-55A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A	PDF
BUK9508-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	O220AB BUK9508-55 BUK9508-55	PDF
S25 zener diode Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	OCR Scan	BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode	PDF
transistor BUK9508 Abstract: BUK9508-55 BUK950 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	O220AB BUK9508-55 transistor BUK9508 BUK9508-55 BUK950	PDF
2SK3062 Abstract: 2SK3062-S 2SK3062-ZJ MP-25 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance	Original	2SK3062 O-220AB 2SK3062-S O-262 2SK3062-ZJ O-263 2SK3062 2SK3062-S 2SK3062-ZJ MP-25	PDF
2SK3062 Abstract: 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance	Original	2SK3062 2SK3062 O-220AB 2SK3062-S O-262 2SK3062-ZJ O-263 2SK3062-Z O-220SMD 2SK3062-S 2SK3062-Z 2SK3062-ZJ MP-25 MP-25Z d13101	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF

TRANSISTOR 5200 Search Results

TRANSISTOR 5200 Result Highlights (5)

TRANSISTOR 5200 Datasheets Context Search

18P4G

pnp DARLINGTON TRANSISTOR ARRAY

DARLINGTON TRANSISTOR ARRAY

M54562FP

pnp 8 transistor array

rjh3047

BUK9508-55

BUK9508-55

buk9508

45118

transistor AHs

transistor D 982

LTE42005S

d1310

2SK3061

BUK950

BUK9508-55

S25 zener diode

transistor BUK9508

2SK3062

2SK3062

LG color tv Circuit Diagram schematics