TRANSISTOR 4F Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

QCA30B40

Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Contextual Info: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

B200

Contextual Info: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

BUK566-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

PH2856-150

Abstract: PH2856
Contextual Info: 4flE D M/A-COn P H 0 m S b 4 E E a S □ Q Q D 7 7 S 4TT • I1AP T -^ 3 ^ f3 PH2856-150 Microwave Pulsed Power Transistor Design Characteristics • High Efficiency Transistor Geometry • Narrowband 2.856 ± 0.005 GHz Operation • Common Base Configuration

marking 4ft sot363

Abstract: marking TR1 4FT SOT363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification Supersedes data of 1999 May 28 1999 Sep 01 Philips Semiconductors Product specification NPN general purpose double transistor BC846S

BUK455-400B

Abstract: BUK455 BUK455-400A T0220AB
Contextual Info: Philips Components BUK455-400A BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

BC847BPDXV6T1

Abstract: BC847BPDXV6T5
Contextual Info: BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual Complimentary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications.

APT13003Z-E1

Abstract: transistor 2808 APT13003 bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 “ C

2SK799

Abstract: 100C
Contextual Info: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches

TRANSISTOR BC 208

Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
Contextual Info: PHILIPS INTERNATIONAL b5E D • 711DflEb aDb3T4b 223 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in