TRANSISTOR 4F Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

QCA30B40

Abstract: QCA30B60 QCB30A40 QCB30A60 UUE76102 711-1543
Contextual Info: 7 ^ 1 5 4 3 GO051b? TRANSISTOR MODULE 4flfl QCA30B/QCB30A40/60 U U E 7 6 1 0 2 M and Q C B 30A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

B200

Contextual Info: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

Contextual Info: MAXIMUM SOLUTIONS TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

Contextual Info: MAXIMUM SOLUTIONS TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

transistor sockets

Abstract: transistor surface mount transistor 8 B200 To5 transistor
Contextual Info: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger

BUK566-60A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK566-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

2SC288A

Abstract: 2SC288A 5.B
Contextual Info: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)

PH2856-150

Abstract: PH2856
Contextual Info: 4flE D M/A-COn P H 0 m S b 4 E E a S □ Q Q D 7 7 S 4TT • I1AP T -^ 3 ^ f3 PH2856-150 Microwave Pulsed Power Transistor Design Characteristics • High Efficiency Transistor Geometry • Narrowband 2.856 ± 0.005 GHz Operation • Common Base Configuration

BLX93A

Contextual Info: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe

marking 4ft sot363

Abstract: marking TR1 4FT SOT363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification Supersedes data of 1999 May 28 1999 Sep 01 Philips Semiconductors Product specification NPN general purpose double transistor BC846S

transistor D 716

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK455-400B

Abstract: BUK455 BUK455-400A T0220AB
Contextual Info: Philips Components BUK455-400A BUK455-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

SO 607 NH

Abstract: 61-GY DIODE FS 607 608 diode 61gy
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in

Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V