la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
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2N5661
Abstract: 2N5661J 2N5661JV 2N5661JX
Contextual Info: 2N5661 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5661J • JANTX level (2N5661JX)
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2n5661mil-prf-195002n5661j2n5661jx+32n5661jvmil-std-750mil-prf-19500/454
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2N5662JX
Abstract: 2N5662 2N5662J 2N5662JV
Contextual Info: 2N5662 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5662J • JANTX level (2N5662JX)
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2n5662mil-prf-195002n5662j2n5662jx+22n5662jvmil-std-750
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NPN 300 VOLTS vce POWER TRANSISTOR
Abstract: ic 4541 data sheet D-333 NPN 200 VOLTS POWER TRANSISTOR NPN 300 VOLTS POWER TRANSISTOR 2N5663 2N5663J 2N5663JV 2N5663JX
Contextual Info: 2N5663 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5663J • JANTX level (2N5663JX)
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2n5663mil-prf-195002n5663j2n5663jx+72n5663jvmil-std-750npn 300 volts vce power transistoric 4541 data sheetd-333npn 200 volts power transistornpn 300 volts power transistor
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NPN 200 VOLTS POWER TRANSISTOR
Abstract: D-333 Semicoa Semiconductor 2N5660 2N5660J 2N5660JV 2N5660JX
Contextual Info: 2N5660 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Power Transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5660J • JANTX level (2N5660JX)
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2n5660mil-prf-195002n5660j2n5660jx+62n5660jvmil-std-750mil-prf-19500/454npn 200 volts power transistord-333semicoa semiconductor
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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ZO 107 MA
Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2sc5009zo 107 ma341s |
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Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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ne582192sc5004ne58219-a2sc5004-a+3ne58219-t1-a2sc5004-t1-aperfor516
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NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2sc5004nec japan 237 521 02transistor zo 607 |
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2sc5008zo 103 ma 75 623zo 103 ma 75 5421 928 405 767+6nec c 3568td-24332sc5008-t14557 nec518 1149 0 44 1111 928 405 452
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2sc5009transistor 2sc 25812sc 1919nec nf 932+22sc 1915transistor 2sc 733
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IC SEM 2105
Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2sc5008ic sem 21053771 nec |
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928 606 402 00
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2sc5008928 606 402 00 |
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transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
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ne582192sc5004ne58219-t12sc5004-t1+4transistor zo 607zo 607 manec 237 521 02ne582
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NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2sc5004nec 1357la 8873transistor c 4460 |
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DK 53 code transistor
Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary specification File under Discrete Semiconductors, SC04 1995 Dec 07 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS
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sc70-6scd47113062/1100/01/pp8dk 53 code transistor+7transistor 489441633301 marking code pnp transistor4044 for amplificationphilips 23bp317specification transistor
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Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-100A/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic full-pack
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buk543-100a/bbuk543-100a-100b+1pinning-sot186
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D 1437 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2sc5004d 1437 transistor |
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2sc5007td2400transistor zo 6072sc5007-t1+2nec 1555ak-804 164-1-1
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xl 6009
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION
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blv920sc08aot171scd38+2123052/1500/01/pp12xl 6009
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES
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bft92wot323bft92mbc870+10scd31123065/1500/01/pp12nt 407 f transistor to 220nt 407 f transistorm1b marking3358 transistormarking code w1marking code 10 sot23transistor bft92nt 407 f power transistor
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transistor tt 2222
Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.
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711002bggb27fi7blu99blu99/sl+8ot122aot122dtransistor tt 2222tt 2222 npntrimmer capacitor 5-60 pftt 2222ic tt 22224312 020 36642
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transistor NEC B 617
Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2sc5007transistor nec b 617nec. 5.5 473 |
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BLV935
Abstract: ferroxcube 4322 ferroxcube tx
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV935 UHF power transistor Product specification 1995 Jun 29 Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile
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blv935ot273scds47127041/500/01/pp12+2ferroxcube 4322ferroxcube tx
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