TRANSISTOR 45 F 123 Search Results

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR • fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

BFP520

Abstract: VPS05605
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

ev 2816

Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

VPS05605

Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

IC 7481 pin configuration

Abstract: BFP520 application notes
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BFP520 application notes

Abstract: SIEGET 45
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1

AM81214-300

Abstract: AM81214-30 k 118
Contextual Info: AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM81214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

AM1214-300

Contextual Info: AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base

transistor D613 equivalent

Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
Contextual Info: 123455678 LIN-Slave for relay and DC motor control 9ABCDEAF8 Microcontroller: MLX16x8 RISC CPU o o o 16 bit RISC-CPU Co-processor for fast multiplication and division In-circuit debug and emulation Memories o o o 32 kByte Flash with ECC 2 kByte RAM 384 Byte EEPROM with ECC for customer purpose

transistor 4040

Abstract: 2sd794 3400 transistor 2sd794 transistor transistor 2sd794 ic 4040
Contextual Info: 2SD794/2SD794A TO-126C Transistor NPN TO-126C 1. EMITTER 2. COLLECTOR 123 3. BASE 4.040 4.240 Features — 10.800 11.200 3.100 3.300 2.700 2.900 High voltage and Large current capacity Complementary to 2SB744,2SB744A — 3.000 1.800 3.400 2.200 7.800 8.200

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456767 1234567675 345676758 RoHS Compliance ,952-954MHz 3.0W 8.0V, 2 Stage Amp. DESCRIPTION The RA03M9595M is a 3.0-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

RA07M1317MS

Abstract: C 829 transistor
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE 123456764 1234567645 34567645829 829 OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123453637 1234536375 345363758 RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456364 1234563645 3456364578 RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123454673 1234546735 3454673589 RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the

HS2907A

Abstract: JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907
Contextual Info: JANTXV2N2907AUB A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 HSOT PRODUCT SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n I.A.W. MIL-PRF-19500/291 n SMALL OUTLINE SURFACE MOUNT PACKAGE n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS

BUZ10A

Abstract: automatic motor for reverse and forward guided vehicle 30C17
Contextual Info: 7=52=1237 w # Q02^b4b 2 S G S -T H O M S O N k 7 # BUZ10A [M lD { g ^ Q iL [l ïï^ © lD (g i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S- TH OMSO N 30E TYPE V qss ^ ds (on) Id B U Z 10 A 50 V 0 .1 2 Î2 17 A 3> • H IG H S P E E D S W IT C H IN G

2N2484

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features 60 Volts 50mAmps • Meets MIL-S-19500/376 • Collector-Base Voltage 60V • Collector Current: 50 mA NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage

transistor WL 431

Abstract: 2N700A BUV pnp 50a MW1131
Contextual Info: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,