TRANSISTOR 4001 Search Results

2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification Philips Semiconductors August 1994 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION • High power gain

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BC250

Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
Contextual Info: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light

ic 4001

Abstract: ic 4001 datasheet ASI10542 ASI4001
Contextual Info: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

CD9014

Abstract: CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation

CD9015

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 *Pb-free plating product number: MMBT9014L „

CDIL NPN Silicon Planar Transistor CD9014 TO-92 CBE

Abstract: CD9014
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation

CD9015

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015  ORDERING INFORMATION Ordering Number Package Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9015 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.45 W (Tamb=25℃) 3. COLLECTOR Collector current -0.1 A ICM: Collector-base voltage -50

DM20-28

Abstract: 20W power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS DM20-28 Silicon NPN high power UHF transistor DM20-28 is designed for common base wide band amplifier, driver, or oscillator applications in land and mobile and on­ board radio systems. Output Power: Frequency Range: Voltage:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR

CMBT9014

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

transistor smd marking BA sot-23

Abstract: transistor smd sot-23 marking BA
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

transistor S9014

Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR

100MHZ

Abstract: CMBT9014
Contextual Info: CMBT9014 NPN SILICON PLANAR TRANSISTOR FEATURES * Power dissipation PC : 0.25 W Tamb=25OC * Collector current IC : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23 COLLECTOR MECHANICAL DATA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9015 2. BASE 3. COLLECTOR

CMBT9014

Abstract: transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

transistor d 1825 7c

Abstract: CE040
Contextual Info: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 70 S2C Q62702-M0003

transistor npn c 9014

Abstract: 9014 9014 transistor 9014 NPN UTC 9015
Contextual Info: UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

15d smd transistor

Abstract: CMBT9015
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION