TRANSISTOR 3F Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

3FW transistor

Abstract: marking 3FW 3FW marking 3FW ST BC857BW 3FW SOT 3FW NPN BC847BW BC857C
Contextual Info: BC857BW SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857BW 3FW SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847BW

BC857B

Abstract: MARKING 3F BC847B
Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B

3FW transistor

Abstract: marking 3FW 3FW ST 3FW marking pnp 3fw 3FW SOT 3FW NPN 3fw pnp 3FW 22 transistor D marking PNP
Contextual Info: BC857BW SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857BW 3FW SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847BW

pj 66 diode

Abstract: 100-P BUK438-800A BUK438-800B
Contextual Info: PHILIPS INTERNATIONAL ¡□SE ]> 711002b 3fi4 H P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode fìeld-effect power transistor in a plastic envelope. The device is intended for use in

BC857B

Abstract: BC847B BC857C
Contextual Info: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B

BUK436-60A

Abstract: 134 T31 100-P BUK436-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 DDEaS^b 3fl•4 APX BUX99 SILICON TRIPLE DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn power transistor in a TO-126 envelope, intended for use in fast switching applications. QUICK REFERENCE DATA

Contextual Info: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

2SC5800

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA873TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

Transistor BFT 10

Abstract: transistor 3Ft bux c 651 emetteur 3ft73
Contextual Info: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature

BC857BS3Ft

Abstract: MBH727
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product specification Supersedes data of 1997 Jul 09 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Amplifier Transistor MSD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package

CMBT6517

Contextual Info: SBûBBTM DDDDflMfl 3flE • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -P -N transistor M ark in g CMBT6517 = 1Z P A C K A G E O U T L IN E D ETA ILS A LL D IM E N S IO N S IN m m _3.0 2.8" 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 ^.02

lem HA

Abstract: BU1708AX
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.

ts 4141 TRANSISTOR smd

Abstract: CSA1162 CSA1162GR CSA1162Y equivalent transistor smd 3 em 7 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y–3E