TRANSISTOR 3B5 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

mda324

Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

smd transistor 8c

Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bbS3T31 0030545 S^2 M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

t07 transistor

Contextual Info: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

MCA45T

Abstract: capacitor philips ll
Contextual Info: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

capacitor 104 PF disc

Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Contextual Info: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile

Contextual Info: N AMER PHILIPS/DISCRETE b 'Ì E D • ^53^31 OOE fiôEM T 3 0 I B L U 3 U /1 i> I APX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 4 7 0 M Hz communications band. Features:

Contextual Info: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz

transistor f613

Abstract: transistor bc 567
Contextual Info: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.

BU508A

Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 transistor BU508D BU-508A
Contextual Info: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in S O T 9 3 A envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The B U 508 D has an integrated efficiency diode.

Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b

Contextual Info: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

f173

Contextual Info: SG S-TH O M SO N S D 1 2 7 5 -0 1 m RF & MICROWAVE TRANSISTO RS VHF MOBILE APPLICATIONS 1 60 MHz 13.6 VOLTS COMMON EMITTER p OUT = 40 W MIN. WITH 9.0 dB GAIN PIN CONNECTION V \ DESCRIPTION The SD1275-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

IT136

Abstract: IT137 IT138 IT139 XIT137 XIT138
Contextual Info: IT136-IT139 CAL06IC CORP_ M8E D • W 3B5 000D3bS l « C 6 C calocft Monolithic Dual PNP General Purpose Amplifier CORPORATION V IT136-IT139 FEATURES • • • • • High Gain at Low Current Low Output Capacitance Tight Ib Match Tight V b e Tracking

Contextual Info: ¿ = 7 S G S -T H O M S O N TEA2164 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP T 0 1.2A AND - 1.7A ■ A TWO LEVEL COLLECTOR CURRENT LIMI­ TATION ■ COMPLETE TURN OFF AFTER LONG DURA­ TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT

siemens BL 350

Abstract: marking W4s FET marking code 365 npn fet transistor marking code HF d5 transistor npn AFC marking Siemens transistors rf transistor 3b5 00jT
Contextual Info: B CR 400 P relim in ary Data A c tiv e Bias C o n tro lle r C h a ra c te ris tic s • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A p p lic a tio n notes • Stabilizing bias current of NPN transistors and FET's from

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

Contextual Info: 3-phase motor driver BA6440FP The B A 6 4 4 0 F P is an 1C used for driving video cassette recorder capstan motors. Dimensions Units : mm BA6440FP (HSOP28) Features • available in a H S O P 2 8 package • supply voltage range 4 ~ 6 V (control block) and 3 ~ 20 V (output block)

MPM3003

Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel