TRANSISTOR 358 TO3 Search Results

NPN power transistor 15A amperes

Abstract: transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31
Contextual Info: 2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.

NPN power transistor 15A amperes

Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS
Contextual Info: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A

BSV64

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64

ic str 6707

Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor

2108 npn transistor

Abstract: BFX34 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34

transistor 2n1711

Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor

transistor 2n1613

Abstract: 2N1613 2n1613 st BP317 1na120
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor

BSX32

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX32 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN switching transistor BSX32

2N1893

Abstract: BP317 TRANSISTOR 2n1893 2n1893 st
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1893 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 17 Philips Semiconductors Product specification NPN medium power transistor

2N4036

Abstract: BP317 sot511 transistor 2n4036
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification PNP switching transistor

ic str 6707

Abstract: str s 6707 M3D111 2n3019 equivalent IC 7430 datasheet PO 903 2N3019 BP317 Transistor 2N3019
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor

BFT45

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFT45 PNP high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 18 Philips Semiconductors Product specification PNP high-voltage transistor

BFX30

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor BFX30

transistor BFX85

Abstract: BFX85 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX85

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

transistor BC 458

Abstract: transistor a42 MO-003 transistor Bc 540 ua109a CERAMIC PIN GRID ARRAY CPGA lead frame transistor bc 577 W144A UA65A CERAMIC QUAD FLATPACK CQFP
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> b b S a ' m 0027752 T27 APX BFX34 J V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA

Contextual Info: SGS-THOMSON 5 HiSiniMOtgS rz 7 ^ 7# SGSF665 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR . HIG H S W IT C H IN G 'SPEED NPN POW ER TRANSISTOR • HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS . 50kHz SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS

RCA-2N3055

Abstract: rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA
Contextual Info: ÏÏÏ 3875081 G E SOLID STATE DE •3 Û7 SQ Û1 0Qi7J.bc! 5 01E 17352 D ì~ T -3 3 -/3 General-Purpose Power Transistors_ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices for Industrial and Commercial Use Features:

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

IGT6D21

Abstract: IGT6E21
Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high

220v 2a transistor

Abstract: smps 1500W 250V transistor npn 2a SGSF665 transistor npn 100khz collector voltage 5v transistor npn high speed switching
Contextual Info: f Z 7 S 5 ^7# C S - T H O M [ L t K S g T M O N K S S G S F 6 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR • H IG H S W IT C H IN G 'S P E E D N P N P O W E R TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS ■ 50kHz SW ITCHING SPEED

2n5302

Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)

2n3055 regulator 10a

Abstract: 2n3055 voltage regulator Transistors 2N3055 Transistor 358 to3 2N3055 2n3055 collector characteristic curve npn 2n3055 J 2N3055 NPN Transistor 2N3055
Contextual Info: 2N3055 NPN POWER TRANSISTORS 60 VOLTS 15 AMP, 115 WATTS General purpose power transistor designed for power regu­ lator, switching and solenoid drive applications. NPN C OLLECTOR Features: • High gain at high current • Low saturation voltage: VcE sat < 1-1V,