TRANSISTOR 355 EQUIVALENT Search Results

A143E

Abstract: DTA143ESA DTA143EUA resistors DTA143ECA DTA143EE DTA143EKA transistor 355
Contextual Info: Transistors Digital transistors built-in resistors DTA143EE / DTA143EUA / DTA143EKA / DTA143ECA / DTA143ESA FFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

TEA15xx-series

Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
Contextual Info: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors

2N3735

Abstract: 2N3735L 2N3737 2N3737UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

JANTX 2N3735

Abstract: 2n3735
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3737 2N3735L 2N3737UB JAN

c125t

Abstract: a144* transistor A143E resistors DTA113Zs a124e DTB143TS PNP TRANSISTOR a144E transistor 96286B
Contextual Info: Transistors DTA113TKA DTC123TKA SPEC-A113T (SPEC-C123T) 467 Transistors Digital transistors (built-in resistors) DTA113ZE / DTA113ZUA / DTA113ZKA / DTA113ZSA FFeatures 1) The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit).

Contextual Info: KSR1110 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=10Ktt) • Complement to KSR2110 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic

power 22E

Abstract: micro-x micro-x mhz ghz microwave MPSIG001 S21E S22E
Contextual Info: M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels

Contextual Info: KSR1101 NPN EPJTAXIAL SILICON TRANSISTOR SW ITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, «4.7U1, R*=4.7kû) • Complement to KSR2101 SO T-23 ABSO LU TE MAXIMUM RATINGS (TA=25'C)

NTE486

Contextual Info: NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: D Specified 12.5V, 470MHz Characteristics:

NTE361

Contextual Info: NTE361 Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristics:

IC 4558 CIRCUIT DIAGRAM

Abstract: preamplifier 4558 circuit diagram BTL POWER AMPLIFIER ic 4558 preamplifier 4558 circuit TRANSISTOR POWER AMPLIFIER ic 4558 ic 4558 pin diagram TRANSISTOR BTL POWER AMPLIFIER ic 4558 ic 4558 8 pins TRANSISTOR 4558 cd 4558
Contextual Info: Optical disc ICs 4-channel BTL driver for CD players BA6793FP The BA6793FP is a 4-channel BTL driver for CD player actuators and motors. This IC has an internal 5V regulator and a standard operational amplifier, making it suitable for a wide spectrum of applications.

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

Contextual Info: Transistors Digital transistors built-in resistors DTA144TE/DTA144TU A/DTA144TKA/ DTA144TCA/DTA144TSA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit DTA144TE l.0±0.) without connecting external input

toroid ferrite smps inductor

Abstract: pot core inductor emi TOROIDS Design Considerations smps inductor filter design LT1073-5 1800R 18R224 18R334 18R474 HP4192A
Contextual Info: INDUCTOR APPLICATIONS Contents terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-46 data sheet parameters . . . . . . . . . . . . . . . . . . . . . . 3-46 other parameters . . . . . . . . . . . . . . . . . . . . . . . . . 3-47 inductor types . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-47

vqe 24 d

Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Contextual Info: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

J135

Abstract: 552 transistor motorola J13-5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. 500 W PEAK 1025 – 1150 MHz MICROWAVE POWER

2n5302

Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)

fuji step motor

Contextual Info: High Performance Multifunctional Inverters Maximum Engineering for Global Advantage FUJI INVERTERS With the flexibility and functionality to support a wide range of applications on all types of mechanical equipment, the FRENIC-MEGA takes core capability, responsiveness, environmental awareness, and

TRANSISTOR 2n697

Abstract: 2N697S 2N696S 2N697 2N696 TRANSISTOR 2n696
Contextual Info: The documentation and process conversion measures necessary to comply with this amendment shall be completed by 16 May, 2000. MIL-S-19500/99E AMENDMENT 3 16 February, 2000 SUPERSEDING AMENDMENT 2 15 July 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

2N2920

Abstract: 2n2919 2N2920U lake transistor transistor 2N2919 2N2919U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NTE195A

Abstract: 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor
Contextual Info: NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a

ls-4000

Abstract: schroff max 124
Contextual Info: S Series with PFC Data Sheet 100 Watt AC-DC Converters Features Input voltage range from 85 - 255 VAC, 50 - 60 Hz 1 or 2 isolated outputs up to 48 VDC Class I equipment • • • • • • • • • • • 111 4.4" 3U 60 2.4" 12 TE 168 6.6" Universal AC-input voltage range

LS4000

Abstract: schroff 11009 023 schroff power supply 11009 hzz01209 schroff 11009 BCD20003-G LS5540-7R ls4001 schroff power supply vme LS2000
Contextual Info: S Series with PFC Data Sheet 100 Watt AC-DC PFC Converters Features Universal AC input range 100 - 240 VAC, 50 - 60 Hz 1 or 2 isolated outputs up to 56.5 VDC Class I equipment • RoHS lead-solder exemption compliant • Power factor >0.93, harmonics IEC/EN 61000-3-2

BFT46

Contextual Info: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film