Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 338 Search Results

    TRANSISTOR 338 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 338 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUJ100

    Abstract: transistor BUJ100
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use


    Original
    buj100transistor buj100 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ100 Silicon Diffused Power Transistor Product specification September 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use


    Original
    buj100 PDF

    2SC5005

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original
    2sc5005 PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original
    2sc4571sc-702sc4571-t12sc4571-t2 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


    OCR Scan
    2sc4571sc-702sc4571-t12sc4571-t2 PDF

    2sc4571

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


    OCR Scan
    2sc4571sc-702sc4571-t1 PDF

    transistor 1211

    Abstract: transistor su 312 transistor zo 109
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    OCR Scan
    2sc5005collect69transistor 1211transistor su 312+1transistor zo 109 PDF

    Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original
    ne582192sc5004ne58219-a2sc5004-a+3ne58219-t1-a2sc5004-t1-aperfor516 PDF

    NEC JAPAN 237 521 02

    Abstract: transistor zo 607 2SC5004
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original
    2sc5004nec japan 237 521 02transistor zo 607 PDF

    ZO 103 MA 75 623

    Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


    Original
    2sc5008zo 103 ma 75 623zo 103 ma 75 5421 928 405 767+6nec c 3568td-24332sc5008-t14557 nec518 1149 0 44 1111 928 405 452 PDF

    IC SEM 2105

    Abstract: 3771 nec
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low


    OCR Scan
    2sc5008ic sem 21053771 nec PDF

    928 606 402 00

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low


    OCR Scan
    2sc5008928 606 402 00 PDF

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original
    ne582192sc5004ne58219-t12sc5004-t1+4transistor zo 607zo 607 manec 237 521 02ne582 PDF

    IGT4E10

    Abstract: 4D10 VQE 22 VQE 12 IGT4D10
    Contextual Info: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and


    OCR Scan
    igt4d10igt4e104d10vqe 22+1vqe 12 PDF

    NEC 1357

    Abstract: LA 8873 TRANSISTOR C 4460
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan
    2sc5004nec 1357la 8873transistor c 4460 PDF

    SN 4931

    Abstract: 2sc 3476 2SC 1885 SN 4931 N
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the


    OCR Scan
    2sc5005sn 49312sc 34762sc 1885+1sn 4931 n PDF

    8ch pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
    Contextual Info: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array


    Original
    td62std62mtd62ctb62/td/uln/ulq+16d62598aptd62601ptd62602ptd62603ptd62604ptd62703p8ch pnp darlington transistor arraypnp darlington transistor arrayuln* pnp transistor arraypnp darlington sink driverpnp darlington arraym54586ppnp darlington array ulnuln2803 to drive 7 segment displayuls2003hnec pa2003c PDF

    T6360

    Contextual Info: SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3841 is an NPN silicon epitaxial transistor intended fo r use as in m illim e te rs UHF oscillators and a UHF mixer in a tuner o f a TV receiver.


    OCR Scan
    2sc3841rat700t6360 PDF

    D 1437 transistor

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan
    2sc5004d 1437 transistor PDF

    BUK455-60A

    Abstract: buk455
    Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    buk455-60a/bbuk455t0220abbuk455-60a PDF

    BU2532AW

    Abstract: BU2532
    Contextual Info: Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended tor use in horizontal deflection circuits of high resolution monitors.


    OCR Scan
    bu2532awtmbs251e-06ie-04+2ie-02bu2532 PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original
    transisto25-735ntc 220-11philips transmitting bipolarphilips semiconductors small-signal transistors selection guide PDF

    DSP56300

    Abstract: DSP56303 G38-87 AA0482
    Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or


    Original
    dsp56303aa0500dsp56303/ddsp56300+2g38-87aa0482 PDF