TMBS25 Search Results

BUK10B-50US

Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
Contextual Info: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

K2025

Abstract: k202 uk202
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50X TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK101-50GL Logic level For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power

Contextual Info: Philips Semiconductors Product specification PowerMOS transìstor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general

Contextual Info: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

100PD

Abstract: BUK102-50GS T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7 1 1 0 0 2 b 0DL.3Ö3M bSO « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK102-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended

diode ESM 182

Abstract: RD25C diode ESM 179
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2508DW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.

f04u

Contextual Info: k 1 TELEFUNKEN E L E C T R O N IC 1?E . A E G 'W •¡nULKFÜÜKlKiiM electronic Cmm1khAO og>is D ■ û'JSDO'ïb 0 0 0 û 7 4 b TSUS 5411 CORP ■ T * i_Lf — 11 I * ^*1 *1 GaAs Infrared Diodes In 5 mm Cases Application: Radiation source in near infrared range

Contextual Info: N ANER P H ILIP S /D IS C R E TE bRE D • bbSBRBl QQBQBbB 7Ub M A P X Product Specification Philips Sem iconductors BUK101-50GL PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET BUK100-50GS DESCRIPTION Monolithic temperature and overtoad protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK101-50DL

Abstract: T0220AB buk101 transistor BUK101
Contextual Info: N APIER P H I L I P S / D I S C R E T E fc.'ìE T> m LbSBIBl QD3D3SS b?T • APX Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

BUK100-50GS

Abstract: T0220AB buk100-30gs
Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 711DÖ2L ÜOti37âE 4T2 HIP H IN Product Specification Philips Semiconductors BUK100-50GS PowerMOS transistor TOPFET QUICK REFERENCE DATA DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general

BU2532AW

Abstract: BU2532
Contextual Info: Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended tor use in horizontal deflection circuits of high resolution monitors.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Fk capacitor philips

Contextual Info: Philips Semiconductors Product SDecificatlon PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other

K8013P

Abstract: K8013
Contextual Info: TELEFUNKEN ELECTRONIC W fl^EOO^b QGQ7761 1 • AL66 ì> 'T - m - s ? K 8013 P TTlDJIIFilSNlKlK electronic Crtdtrve Technologies Optically Coupled Isolator Construction: Applications: Emitter; GaAs IR Emitting Diode Detector: Monolithic integrated circuit consists of: