TRANSISTOR 3006 Search Results

2sc945

Abstract: 2SC945L 2SC945 R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:

trr 30-06xx2

Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
Contextual Info: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex

2sa733

Abstract: 2SC945 DATASHEET 2SC945
Contextual Info: UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity

2SA733

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA733 is a low frequency amplifier.  FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up to -150mA

D1616A

Abstract: d1616 transistor d1616a utc d1616a UTC d1616
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

D1616A

Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

2SA733

Contextual Info: UTC 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION 3 The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity

2SA733

Abstract: 2SC945 SOT-23 PIN 2SA733 2SA733G 2SA733-X-AL3-R QW-R206-068 TO92 LOW VCE PNP 2SA733 SOT-23 transistor 2sa733 BVCBO-50V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 3 3 2 SOT-23 „ 1 2 1 SOT-323 DESCRIPTION The UTC 2SA733 is a low frequency amplifier. „ FEATURES * Collector-emitter voltage: BVCBO=-50V

2SC945 SOT-23

Abstract: 2SA733 MARKING A7 transistor transistor marking A7 A7 TRANSISTOR sot 23 2SC945 SOT23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 3 2 DESCRIPTION 1 SOT-23 The UTC 2SA733 is a low frequency amplifier. 3 FEATURES 2 * Collector-Emitter voltage: BVCBO=-50V * Collector current up to -150mA

Contextual Info: SAMSU NG S E M I C O ND U C T O R INC MMBT2222 14E D | T'Ibm ME 00072S3 1 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C C haracteristic CoBector-Base Voltage Codec tor-Emltter Voltage Emitter-Base Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

LB1710

Contextual Info: Ordering number:ENN1977B Monolithic Digital IC LB1710 Low-Active, 7-Unit, Darlington Transistor Array Applications Package Dimensions • Relay drivers, printer drivers, lamp drivers. unit:mm 3006C-DIP16 Features [LB1710] • Input : Low-active type, Output : Sink type

Contextual Info: KSC2784 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY LOW NOISE AMPLIFIER • Complement to KSA1174 TO-92S ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

KSD1616

Abstract: KSD1616A KSB1116
Contextual Info: KSD1616/1616A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSB1116/1116A ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage : KSD1616 : KSD1616A Collector-Emitter Voltage : KSD1616

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1616A TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AN D SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE sat W = 15mV (Typ.) @ 1(3 = 10mA / Ig —0.5mA

PS9505

Abstract: a 3120 opto HCPL-3120-000E equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL3120 HCPL-3120-300 AN-3006 PS9505-V
Contextual Info: A p p l i c at i o n N o t e AN 3006 Optocoupler Performance Comparison: NEC PS9505 vs. Avago HCPL-3120 Introduction Both the PS9505 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CSD1616 TO-92 BCE Audio Frequency Power Amplifier And Medium Speed Switching

Transistor a733

Abstract: A733 a733 transistor A733 p data sheet a733 a733 transistor datasheet a733 datasheet transistorA733 TRANSISTOR K 135
Contextual Info: PNP TRANSISTOR A733 -100mA AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA

STO-23

Abstract: KSA812 KSC1623
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: T O SH IB A 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS Low Collector Saturation Voltage : Vc e sat (l) = 15mV (Typ.) @ l£ = 10mA / 1]3 = 0.5mA

csc945

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)