TRANSISTOR 30 J 127 Search Results

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ

Helipot POTENTIOMETER

Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Contextual Info: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION

RTM 866 - 485

Contextual Info: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!

transistor K 3565

Abstract: JD127 transistor 45 f 122 2N6040-2N6045 MOTOROLA MJD122 jd122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* Com plem entary Darlington Power Transistors PNP M JD 127* DPAK For Surface Mount Applications *Motoro<a Pr«ftffd Device Designed for general purpose amplifier and low speed switching applications. SILICON

MOTOROLA MJD122

Abstract: transistor 3568 darlington transistor with built-in temperature c TIP125-TIP127 1N5825 369A-13 MJD122 MJD127 MSD6100 WR-250
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* PNP M JD 127* Com plem entary Darlington Power Transistors DPAK For Surface Mount Applications •Motorola Preferred Dtvlct Designed for general purpose amplifier and low speed switching applications. •

SD1272

Abstract: SD1272-2 M113
Contextual Info: • Æ SR J ipl°? a itsn — -, ? iW IC r D S G f f ll W W W »»»» P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 o n . 0 7 0 SD 1272-2 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS

transistor r1009

Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Contextual Info: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02

2SC3230

Abstract: 2SA1276
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC3230 APPLICATIO N S • Pow er A m plifier A pplications Car Radio, C a r S t e r e o O utput S ta g e Am plifier I •j Applications. FEA TU R ES • C om plem entary to ) 2 S A 1276 5 W atts O utput A p p lic a tio n s .

Contextual Info: SG S-T H O M SO N S D 1274-01 m RF & MICROWAVE TRANSISTO RS VHF MOBILE APPLICATIONS 1 60 MHz 13.6 VOLTS COMMON EMITTER P OUT = 30 W MIN. WITH 10 dB GAIN PIN CONNECTION 4/\ 1 Q A DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF

AJB-4

Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
Contextual Info: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection

tip122 transistor

Abstract: TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121
Contextual Info: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: • Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126

78S40

Abstract: MA 78S40 regulator RS 262-466 78S40 Switching Voltage Regulator oscillator circuit with op amp 741 its output 1N4001 1N5401 2N5876 RM10
Contextual Info: Issued March 1991 008-127 Data Pack J Data Sheet Switching regulator 78S40 RS stock number 657-729 The 78S40 is a monolithic switching regulator IC consisting of all the active building blocks necessary for switching regulator systems. The device can be used

783C

Abstract: DARLINGTON TRANSISTOR ARRAY LB1272
Contextual Info: Ordering number: EN 783C Monolithic Digital 1C LB 1272 N0.783C 6-Unit, Darlington Transistor Array The circuit configuration of this 1C is a 6-u nit Darlington transistor array consisting of NPN transistors and is ideally suited for use in printer ham m er driving, lamp or relay driving applications.

UM91260B

Abstract: UM91260C znr 10k 270 UM91260 UM91261 3 x 4 keypad to 7 segment decoder DP 25 H 1200 T
Contextual Info: UNICORN MICROELECTRONICS 24E S • 1276781 0001286 8 ■ U M 91260/61 10 Memory Tone/Puls» Dialer Features ■ 32-digit redial memory 31 digits in tone mode ■ Ten indirect memories, 16 digits in pulsé mode, 15 digits in tone mode' ■ Tone/Pulse mode switching via slide switch (4.1 second

floppy disk motor head driver

Abstract: t2d4 floppy disk motor head step 555 timer for 12v supply Hitachi stepping motor ha1664 stepping motor coil construction HA16640NT FDD STEP MOTOR HA1663
Contextual Info: 4496204^l u rtJÉTMiì«iBgr-nfÌrJi-«iì T ACHÎ/ MCU/MPU 92D mTfT — 12713 D \i-fk -aiiteagiiife T ~ S 2 -3 3 ~ ~ // ïm $ HA16640NT Preliminary February 1985 Write/Mechanism Controller fo r Floppy Disk Drive This 1C can provide W R IT E + M E C H A N IS M C O N T R O L function is one chip fo r FLO P P Y

Contextual Info: Bulletin 127500 08/97 International IO R Rectifier m t .KB THREE PHASE BRIDGE SERIES Power Modules Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case

cpm1-cif11

Abstract: omron CPM1-CIF01 rs 232 manual omron srt2-id16 SRT2-ROC16 OMRON MANUAL CPM1-CIF01 transistor C3306 omron SRT2-OD16-1 SRT2-ID16T-1 CPM1-CIF01 PIN OUT 16 to 4 encoder
Contextual Info: R Distributed I/O Controller SRM1 The SRM1’s high-speed distributed I/O controller is a revolutionary design in PLC control. The SRM1 places all the processing power and control in the ultra compact master unit and allows you to distribute up to 256 points of I/O via a twisted pair network. You

GP 809 DIODE

Abstract: GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

Contextual Info: Bulletin 127500 08/97 International IG R Rectifier m t. TH R E E PHASE B RIDG E KB SERIES Power Modules Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case

GP 809 DIODE

Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from

Contextual Info: Bulletin 127501 08/97 International Iw R Rectifier m t. Power Modules THREE PHASE BRIDGE Features • P a ckag e fully com patible with the industry standard IN T-A -pak pow er m odules series ■ High therm al conductivity p ac kag e, electrically insulated case

KE721K03

Contextual Info: 3TE D POWEREX INC • 00GMM3M A « P R X mMMVDL Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Duranti, BP107,72003 Le Mans, France (43) 41.14.14 KE721KÓ3HB High-Beta r - 3 3 - j r S iX -D a r U fig t O n

Contextual Info: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.

tt 3043 Transistor 5 pin type

Abstract: transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC
Contextual Info: N T E ELECTRONICS INC S5E T> bM aiSST DQQEbfl? STS « N T E T-H \-*O I D INDICATORS NTE TVI» No. Description and Application Dtag. NO. «y Per Bag Ind Pkg S ia Typical Viewing Angle Viewed ' Color Typical Maximum (Volts) Breakdown voltage (Vorta) Maximum