TRANSISTOR 2X5 Search Results

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

ferroxcube 4322

Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature

l17c

Abstract: 727 Transistor power values BLF246B
Contextual Info: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor

Contextual Info: N AMER PHILIPS/DISCRETE 86D 01128 ObE D bbS3T31 DD133bb fl D BLU53 _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the-30 to 400 M H z range.

BLU53

Abstract: 2929 transistor
Contextual Info: N AMER PHIL^ PS / DISCRETE 86D 01126 ObE D • t>b53T31 00133bfci fl D 'T - 3 '3 ’ / ^ BLU53 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in m ilitary and professional wideband applications in the-30 to 4 0 0 M H z range.

transistor smd ba rn

Abstract: sot494
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TPV8100B

Contextual Info: TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Metalization

TPV-3100

Abstract: TPV3100 transistor tpv3100
Contextual Info: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting Internal Matching • PACKAGE STYLE .450 BAL FLG. A

25 ohm semirigid

Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
Contextual Info: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l

Contextual Info: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V

transistor BD 135

Abstract: capacitor J336 EQUIVALENT OF K 2843 J336 TPV8200B transistor k 2843
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TPV8200B The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­

tpv8100

Abstract: TPV8100B
Contextual Info: TPV8100B TPV8100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100 is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: PACKAGE STYLE .438X.450 4LFL • Internal Input, Output Matching • Common Emitter Configuration

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

AON5802

Contextual Info: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is

Contextual Info: AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802B/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX)

Contextual Info: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is

Contextual Info: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is

Contextual Info: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5802 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is

TPV3100

Abstract: TPV-3100 transistor tpv3100 "Power TRANSISTOR"
Contextual Info: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. C D F U LL R G O F E FEATURES INCLUDE: .1925 • Gold Metalization • Emitter Ballasting