TRANSISTOR 2TH Search Results

TRANSISTOR 2TH Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 2TH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
lv 5682 Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837 Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically	OCR Scan	RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837	PDF
transistor 2TH Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK452-100A/B BUK452 -100A -100B T0220AB transistor 2TH	PDF
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK552-100A/B BUK552 -100A -100B T0220AB	PDF
transistor 2TH Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance	OCR Scan	PHP6N10E T0220AB transistor 2TH	PDF
ld 18 Abstract: transistor 2TH Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK482-100A OT223 D/100 -rI--41 OT223. ld 18 transistor 2TH	PDF
BUK443 Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	711Dfi2b BUK443-60A/B OT186 BUK443 BUK443-60A BUK443-60B TRANSISTOR C 557 B	PDF
BUK637-400A Abstract: BUK637-400B Contextual Info: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control	OCR Scan	BUK637-400A BUK637-400B BUK637 -400A -400B M89-1166/RC BUK637-400A BUK637-400B	PDF
T160R Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in	OCR Scan	BUK465-100A SQT404 T160R	PDF
ixis mmo36-16 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	OCR Scan	BUK7506-30 T0220AB ixis mmo36-16	PDF
B 647 AC transistor Abstract: uav specification transistor 2TH Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK452-60A/B BUK472-60A/B BUK472 T186A B 647 AC transistor uav specification transistor 2TH	PDF
MARKING 2th sot363 Abstract: MARKING CODE 2th sot363 BP317 MDA996 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH2 NPN resistor-equipped double transistor Product specification 1999 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH2 FEATURES • Transistors with built-in bias resistors R1 and R2	Original	MBD128 115002/01/pp8 MARKING 2th sot363 MARKING CODE 2th sot363 BP317 MDA996	PDF
Response AA0482 Abstract: 49/Response AA0482 Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this	OCR Scan	DSP56303 Response AA0482 49/Response AA0482	PDF
k443 Abstract: BUK443-100A BUK443-100B Contextual Info: PHILIPS INTERNATIONAL bSE D E9 711DflEb □DbB'lSt. 172 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	K443-1OOA/B buk443 -100a -100b -SOT186 k443 BUK443-100A BUK443-100B	PDF
BUK443 Abstract: BUK443-60A BUK443-60B Contextual Info: PHILIPS INTERN ATIONAL bSE T> m TUDflEb 00b3^51 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK443-60A/B OT186 -ID/100 BUK443 BUK443-60A BUK443-60B	PDF

BU2708DX Abstract: transistor 2TH jvc capacitor Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to	OCR Scan	BU2708DX BU2708DX transistor 2TH jvc capacitor	PDF
Contextual Info: bbSBTBl 0D20bSD 7 SSE D N AUER PHILIPS/ DISCRE TE PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery	OCR Scan	0D20bSD BUK627-400A BUK627-400B BUK627 -400A T-39-H bS3T31 0020bS4	PDF
nh348 Abstract: BUZ45B D-19 V103 SD 347 transistor Contextual Info: N AMER P H I L I PS / D IS CR E TE ObE PowerMOS transistor D • “ bbSBTBl OOmbtl 4 ■ BÜZ45B ' r - 3<?-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	BUZ45B bbS3T31 Q014bb7 T-39-13 nh348 BUZ45B D-19 V103 SD 347 transistor	PDF
BUK436-1000B Contextual Info: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies	OCR Scan	bb53R31 D03047S BUK436-1000B BUK436-1000B	PDF
MN2488 equivalent Abstract: MN2488 transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746 Contextual Info: SünñR pñ SPE C IFIC A TIO N S pp A SANKEN ELECTRIC CGMPANY, LTD. DEVICE TYPE NAME 3 ^ 7 - m n2488 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MN2488 1. mmwm Scope a }• 7 "s 7s & M N 2488 The present specifications shall apply to Sanken silicon power transistor type MN2488.	OCR Scan	MN2488 MN2488 MN2488. SSE-21317 MN2488 equivalent transistors MN2488 sanken power transistor MN2488 mn2488 transistor MN2488 transistor equivalent sanken lot number sanken power transistor MICA-14 G746	PDF
transistor 2TH Contextual Info: N AMER PHILIPS/DISCRETE t^E D • 1^53=131 0027726 706 BFX29 SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter Collector-em itter voltage (open base)	OCR Scan	BFX29 bb53T31 02773A 7Z22S09 bb53131 7ZZ2917 7Z22916 transistor 2TH	PDF
C5024 Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK102-50GL Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic envelope, intended as a general	OCR Scan	BUK102-50GL C5024	PDF
T3D DIODE Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B Contextual Info: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode	OCR Scan	0D307flS BUK552-100A/B T0220AB BUK552 -100A -100B T3D DIODE T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552-100A BUK552-100B	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for	OCR Scan	BUK107-50GL up7-50GL BUK107-50GL 1E-02	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK109-5OGL Logic level TOPFET_ _ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a	OCR Scan	BUK109-5OGL	PDF

TRANSISTOR 2TH Search Results

TRANSISTOR 2TH Result Highlights (5)

TRANSISTOR 2TH Datasheets Context Search

lv 5682

transistor 2TH

transistor 2TH

ld 18

BUK443

BUK637-400A

T160R

ixis mmo36-16

B 647 AC transistor

MARKING 2th sot363

Response AA0482

k443

BUK443

BU2708DX

nh348

BUK436-1000B

MN2488 equivalent

transistor 2TH

C5024

T3D DIODE