NPN Transistor BC548B
Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB
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t092jbc167abc167bbc168a+10bc168bbc168cbc169bbc169cbc182labc182lbnpn transistor bc548bbc548bc238b npnbc337-40 npn transistor
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NPN Transistor BC548B
Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA
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bc167abc167bbc168abc168b+12bc168cbc169bbc169cbc182labc182lbbc212lanpn transistor bc548btransistor bc238btp2369at092 transistorpro-electronbcs48
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HN3C17F
Abstract: TOSHIBA IC 2803 E33 marking
Contextual Info: TOSHIBA TENTATIVE HN3C17F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C 17F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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hn3c17f16ghztoshiba ic 2803e33 marking |
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bh6620k
Abstract: Fdd spindle motor circuit 300 BA1300 ba6476 BA6487AFP-Y ba6479afp-y BA6600 FDD STEPPER MOTOR BA658 fdd spindle controller
Contextual Info: I, 1 FDD Block Diagram of Typical Applications PHOTO INTERRUfTER Single-chip FDD a- ailable in full-custom design Read/write ampliiier BA6600 Series Side "O' Side “1" I FDD controller S2PCS Series PHOTO REFLECTOR I Motor driver Transistor array BA6470/ 80
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ba6600ba12000ba13000qfp44+10qfp32bh6620kfdd spindle motor circuit 300ba1300ba6476ba6487afp-yba6479afp-yfdd stepper motorba658fdd spindle controller
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t01 transistor
Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
Contextual Info: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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std03p---mt-105std03nt01-002ea-060309+8t01 transistorsanken audiosanken transistortransistor sanken catalogstd03darlington transistor for audio power application8darlingtonsanken power transistor
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RF marking code P2T
Abstract: cen 2N5401 330MF100V
Contextual Info: LTC4261 Negative Voltage Hot Swap Controller with ADC and I2C Monitoring U FEATURES DESCRIPTIO • The LTC 4261 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor,
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ltc426110-bit28-lead24-lead+9ltc4252-1/ltc4252-2ltc4252a-1/ltc4252a-2ltc4253ltc4260ltc4354ltc4261cgnrf marking code p2tcen 2n5401330mf100v
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cx 2606
Abstract: 4261F IRF1310NS LTC4261 LTC4261CGN LTC4261IGN R7B Connector 330MF100V
Contextual Info: LTC4261 Negative Voltage Hot Swap Controller with ADC and I2C Monitoring U FEATURES DESCRIPTIO • The LTC 4261 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor,
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ltc426110-bitindc4252-1/ltc4252-2ltc4252a-1/ltc4252a-2+11ltc4252altc4253ltc4260ltc43544261fcx 2606irf1310nsltc4261cgnltc4261ignr7b connector330mf100v
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NPN transistor 310
Abstract: TMPT2369
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • GSG433Ô OOOMT'iQ t> ■ ALGR -01 SPRAGUE PROELECTRON SOT23? TRANSISTORTYPESiK# *• * SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-25 BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B
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gsg433bc807-16bc807-25bc807-40+8bc817-16bc817-25bc817-40bc846abc846bbc847anpn transistor 310tmpt2369
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TRANSISTOR sanken catalog
Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
Contextual Info: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode
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std03nmt-105std03p10that+9t01-001ea-060309transistor sanken catalogsanken power transistort01 transistorsanken audiot01001b105sanken transistorsanken rectifiers
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Contextual Info: Ordering number : EN 1070C 2SC3151 NO.1070C NPN Triple Diffused Planar Silicon Transistor SAÊYO i 800V/1.5A Switching Regulator Applications Features . High breakdown voltage Vç b o -9°0v . High switching speed . Wide ÂSO Absolute Maximum Ratings a t Ta=25°c
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1070c2sc315100v/1pws300jis+45097ki/4193kid020dbl2td0e000020gl3
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bkd transistor
Abstract: Zener diode 1N4146 1n4146 zener NPN transistor 310 Dba sot23
Contextual Info: SPRAGUE/SEMICO ND GROUP IME D • 0513050 0QG47TQ 7 ■ T-^-öl SOT23 TRANSISTOR TYPES Type No. BC807-16 BC807-2S BC807-40 BC817-16 BC817-25 BC817-40 BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C BC856A BC8S6B BC857A BC857B
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0qg47tqbc807-16bc807-2sbc807-40+11bc817-16bc817-25bc817-40bc846abc846bbc847abkd transistorzener diode 1n41461n4146 zenernpn transistor 310dba sot23
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RZB06050W
Abstract: transistor B42 Transistor 2TD 476 capacitor 100B102KP50X capacitor 476
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal input prematching networks allow an easier design
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rzb06050wfo-57c711dfi2fcit-33-09+5transistor b42transistor 2td476 capacitor100b102kp50xcapacitor 476
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BFG403W
Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors
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bfg403w125104/00/04/pp12 |
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ba6489fs
Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
Contextual Info: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »
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sa6470/ba6569kba6600kba6607k+15ba6608kba6610akba6612kvbh6620kba12000ba13000ba6489fsba6479afp-yba6489ba66081450 transistorba6485ba6845ba6491fsfdd spindle motor circuit 300
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2SK48
Abstract: transistor 2sk 100-C
Contextual Info: SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I ff I i ffl TENTATIVE INDUSTRIAL APPLICATIONS c m u l m . -ù -m tn o o Medi c a l Elec t r o n i c Equi p m e n t • ¡SfiiüíT-í- ; _ Unit in mm '052MAX. NF = &5CLB Typ. R g = 100kí3
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100ki120hzcharacteristic120id-450/ia+4ta-251c2sk48transistor 2sk100-c
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Contextual Info: TOSHIBA H N 3 C 1 1 FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 1 FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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hn3c11n3c11 |
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CA3140S
Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
Contextual Info: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)
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ca3140200ns/dlv50mv/div200ns/div+1350mwdh/140khztektronix7a13rgure35ca3140stransistor equivalent tt 2142harris ca3140aediagram transistor tt 2140ca3140etransistor tt 2140pin diagram of ic ca3140ca3130 peak detectorca3140ae
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68HC12
Abstract: 68HC16 AN1837 M68HC08 M68HC12 motorola embedded flash 1990
Contextual Info: MOTOROLA Order this document by AN1837/D SEMICONDUCTOR APPLICATION NOTE Non-Volatile Technology Memory Overview By Stephen Ledford Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford
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an1837/dan183768hc1268hc16+3m68hc08m68hc12motorola embedded flash 1990
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motorola transistor cross reference
Abstract: 68HC12 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola application note
Contextual Info: Order this document by AN1837/D Motorola Semiconductor Application Note AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with
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an1837/dan1837motorola transistor cross reference68hc12+568hc16m68hc08m68hc12flash crossmotorola application note
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68HC12
Abstract: 68HC16 AN1837 M68HC08 M68HC12 FLASH CROSS motorola transistor cross reference
Contextual Info: Freescale Semiconductor, Inc. Order this document by AN1837/D Motorola Semiconductor Application Note Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction
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an1837/dan183768hc1268hc16+4m68hc08m68hc12flash crossmotorola transistor cross reference
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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o01ed0h1-o01ed0-0106030ndem 234 stepper2sc5586 equivalent+88002 1018 audio amplifier2sc55862sc5487voltage doubler bridgevaristor 560-22sa2003se125nse090
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disadvantages 68hc12
Abstract: 68HC3xx flash "high temperature data retention" mechanism 68HC12 68HC16 AN1837 M68HC08 M68HC12
Contextual Info: Freescale Semiconductor Order this document by AN1837/D Freescale Semiconductor, Inc. AN1837 Non-Volatile Memory Technology Overview By Stephen Ledford Non-Volatile Memory Technology Center Austin, Texas Introduction Today’s microcontroller applications are more sophisticated with
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an1837/dan1837disadvantages 68hc1268hc3xx+5flash "high temperature data retention" mechanism68hc1268hc16m68hc08m68hc12
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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the32-246622h1-o03ea0-0510020nmtriac zd 607transistor c5586+8bridge rectifier sanken rb40rb40 bridge rectifierrb60 bridge rectifierzd 607 - triacctpg2fctx12stoshiba transistor c4468sta524a
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T0219
Abstract: "step recovery diode" 1.7 pf D4P03
Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 85 mil
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mmdf4p03hd/db3b72s4t0219step recovery diode" 1.7 pf+1d4p03
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