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Cinch Connectivity Solutions ATT-0219-01-NNN-02RF ATTENUATOR 1DB 50OHM NTYPE |
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Cinch Connectivity Solutions ATT-0219-10-NNN-02RF ATTENUATOR 10DB 50OHM NTYPE |
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Cinch Connectivity Solutions ATT-0219-20-NNN-02RF ATTENUATOR 20DB 50OHM NTYPE |
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Cinch Connectivity Solutions ATT-0219-06-NNN-02RF ATTENUATOR 6DB 50OHM NTYPE |
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Cinch Connectivity Solutions ATT-0219-03-NNN-02RF ATTENUATOR 3DB 50OHM NTYPE |
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T0219 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS |
OCR Scan |
MMDF3P03HD/D | |
S5P02HContextual Info: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES |
OCR Scan |
MMSF5P02HD/D S5P02H | |
Contextual Info: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 02 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs |
OCR Scan |
MMDF3N02HD/D | |
BRB20100CTContextual Info: MOTOROLA Order this document by MBRB201OOCT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Power R ectifier M B R B 201O O C T D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the use of the Schottky Barrier principle |
OCR Scan |
MBRB201OOCT/D 418B-02 BRB20100CT | |
Contextual Info: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs |
OCR Scan |
TSF3N03HD/D | |
Contextual Info: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs |
OCR Scan |
MTSF2P03HD/D | |
Contextual Info: MOTOROLA Order this document by MTD20N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand |
OCR Scan |
MTD20N06HD/D 69A-13 | |
Contextual Info: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET |
OCR Scan |
DF2C01HD/D MMDF2C01HD/D | |
Contextual Info: MOTOROLA O rder this docum ent by M M D F6N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES |
OCR Scan |
F6N02HD/D MMDF6N02HD DF6N02HD/D | |
Contextual Info: M OTOROLA Order this document by M1MA141KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low |
OCR Scan |
M1MA141KT1/D SC-70 1MA141KT1 1MA142KT1 M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 SC-70/SOT-323 M1MA141KT1 | |
Contextual Info: MOTOROLA Order this document by M1MA141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package |
OCR Scan |
M1MA141WKT1/D SC-70 M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 SC-70/SOT-323 A141W | |
CIL TRANSISTOR 188Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S V™ MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new technology designed to achieve an on-resistance |
OCR Scan |
MTB52N06V/D MTB52N06V CIL TRANSISTOR 188 | |
Contextual Info: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs |
OCR Scan |
MTSF2P02HD/D 2PHX43416-0 | |
Contextual Info: MOTOROLA Order this document by MURHB840CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Pow er R e c tifie r MURHB840CT D2PAK Power Surface Mount Package Motorola Preferred Device Designed for use in switching pow er supplies, inverters and as free wheeling |
OCR Scan |
MURHB840CT/D MURHB840CT | |
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3B2S
Abstract: df3p03
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MMDF3P03HD/D 3B2S df3p03 | |
Contextual Info: M O TO RO LA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03HDL HDTMOS E-FET™ High Density Power FET DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e TMOS POWER FET LOGIC LEVEL 19 AMPERES |
OCR Scan |
MTD20P03HDL/D TD20P03HDL 69A-13 | |
CDLE-420-297Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. CDLE-420-297 Device Number : REV.: 2 Page: 1/4 3.0mm Round Type LED Lamps PART NO. : 4204-10SURC/S530-A5 █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust ECN: █ Package Dimensions: |
Original |
CDLE-420-297 4204-10SURC/S530-A5 30min CDLE-420-297 | |
Contextual Info: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount |
OCR Scan |
MMBV3401LT1/D MMBV3401LT1 OT-23 O-236AB) V3401LT1/D | |
Contextual Info: MOTOROLA Order this document by MUN5211DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 S E R IE S NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a |
OCR Scan |
MUN5211DW1T1/D MUN5211DW1T1 OT-363 | |
MTD2955VContextual Info: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate |
OCR Scan |
MTD2955V/D MTD2955V | |
un5313
Abstract: 5311DW
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OCR Scan |
MUN5311DW1T1/D MUN5311DW1T1 OT-363 un5313 5311DW | |
Contextual Info: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET |
OCR Scan |
TDF1N02HD/D | |
Contextual Info: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate |
OCR Scan |
MTD1302/D TD1302 69A-13 | |
Contextual Info: MOTOROLA O rder this docum ent by M TD9N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high |
OCR Scan |
TD9N10E/D MTD9N10E/D |