TRANSISTOR 2N7000 Search Results

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

2n7000 equivalent

Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
Contextual Info: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability

2N7000 MOSFET

Abstract: Mosfet 2n7000
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

07153

Abstract: 03aa02
Contextual Info: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .

BJT with i-v characteristics

Abstract: 2N7000 spice transistor BS170* PMOS transistor 1gm 6 2N7000 TRANSISTOR mosfet amplifer circuit 1AV Series 10KHZ 2N7000 BS170
Contextual Info: EE 320L Electronics I Laboratory Laboratory Exercise #8 MOS Transistor Characterization and Biasing Department of Electrical and Computer Engineering University of Nevada, at Las Vegas Objective: The objective of this lab is to introduce the student to the MOS transistor. This lab will

2N7000

Abstract: 2N700 7002A 2n7002 FE -2N7002 "ON Semiconductor" 2N7002
Contextual Info: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

7002N

Abstract: 2N7000 S7002
Contextual Info: November 1995 PAIRCHII-D M ICDNDUCTQ R ! 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current

Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C High density cell design for low RDS ON . A Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.

NDS7002A

Abstract: e05a 2N7000 2N7002 C1995 NDF7000A national 2N7002 sot23 7002
Contextual Info: 2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been

2n7000

Abstract: 2N7002 2N700 100C CBVK741B019 NDS7002A PN2222N 2N700 mosfet
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

2n7000 equivalent

Abstract: 2N7000 EQUIVALENT FOR 2N7000 DSV10
Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C High density cell design for low RDS ON . A Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.

2N7000N

Contextual Info: SEMICONDUCTOR 2N7000 TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・High density cell design for low RDS ON . A ・Voltage controlled small signal switch. ・Rugged and reliable. ・High saturation current capablity.

fairchild 2N7002 MARKING

Abstract: 2N7000-D nds7000
Contextual Info: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

N7000

Abstract: 2N7000 MOSFET CJ NDF7000A sfs sot23 Mosfet 2n7000 2N7000 2N7002 NDF7000A NDS7002A 7002 transistor sm
Contextual Info: March 1993 Semiconductor 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been

Contextual Info: caloric VN0605T N-Channel Enhancement-Mode MOS Transistor _ _ _ _ _ _ . CORPORATION y j VN0605T FEATURES ORDERING INFORMATION • Low rDS on < 5Q Part Package • Low cost VN0605T APPLICATIONS ^or s °rted chips in carriers see 2N7000 Temperature Range Surface Mount SOT-23

Contextual Info: N-ChannelEnhancement-Mode MOS Transistor _ CQIOOIC CORPORATION 2N7000/BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where Bv of 60V and low on resistance under 5 ohms are required. The

2N7000 TO-92

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N1000

Abstract: M2N7002 2N7002 "ON Semiconductor" 2N7002 2n7000 transistor 2n7002 2N700 national 2N7002 N7000 2N7000 MOSFET
Contextual Info: N ational Sem iconductor” 6 N ovem ber 1995 > 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel e nhancem ent m od e fie ld effect tran sisto rs are produced using Nationals proprietary,

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2n7000 equivalent

Abstract: equivalent of 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part

2n7000 motorola

Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Contextual Info: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching