TRANSISTOR 2N60 Search Results

2N6055

Contextual Info: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

2N6056

Abstract: ALL SILICON COMPLEMENTARY transistors darlington
Contextual Info: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics

2n6027

Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6028 Application Note

Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2n6027

Abstract: equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027 pin diagram 2N6028 Application Note 2N6028 unijunction application note 2N6027 PBFREE
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2

Contextual Info: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR

transistor 725

Abstract: 2N6058
Contextual Info: 2N6058 80 V - Darlington Complementary NPN Selicon Power Transistor 7.25 Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6058 Online Store 2N6058 Diodes 80 V - Darlington Complementary N PN Selicon Power Transistors Transistor Integrated Circuits

2N6056

Abstract: 1N5825 MSD6100
Contextual Info: ON Semiconductort 2N6056 NPN Darlington Silicon Power Transistor ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS 100 WATTS • High DC Current Gain —

1N5825

Abstract: 2N6056 MSD6100
Contextual Info: 2N6056 NPN Darlington Silicon Power Transistor The NPN Darlington silicon power transistor is designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — • • http://onsemi.com hFE = 3000 Typ @ IC = 4.0 Adc

2n6031

Contextual Info: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.

Contextual Info: 2N6044 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE T0-220AB DIMENSIONS mm min MAXIMUM RATINGS 8.O A le 1e A PEAK inches

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

equivalent transistor of 2n6027

Abstract: 2N6027 2n6028 PUT 2N6027 transistor put 2n6028 PUT Oscillator 2n6027 unijunction 2N5270 2N6027RL1 2N6028RLRA
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6098 SILICON NPN - POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220 The 2N6098 is an NPN Silicon Power Transistor for General Purpose

2N6027

Abstract: equivalent transistor of 2n6027 2N6028 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

2n5088

Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

2N6027

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N6027 SCR PROGRAMMABLE UNIJUNCTION TRANSISTOR  DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and

Contextual Info: 2N6058 and 2N6059 Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV

2N6079

Contextual Info: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics

Contextual Info: 2N6038 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6038 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-126 V o m MAXIMUM RATINGS 4.0 A Ic 8.0 A PEAK P d iss 60 V 40 W @ Te # 25 °C

2n6080

Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily