TRANSISTOR 224-1 BASE COLLECTOR EMITTER Search Results

2N4265

Abstract: 2904S
Contextual Info: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C

TRANSISTOR bc107 current gain

Abstract: bc107a bc109 bc109c BC108B bc108a bc108c BC107B transistor TO-92 bc108 transistor bc107b
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector, connected to the case • General purpose switching and amplification.

Contextual Info: KSC2759 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature

2N4265

Abstract: 2N4264 QS 100 NPN Transistor
Contextual Info: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C

2SB1050

Contextual Info: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as

Contextual Info: KSC2710 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92S • Complement to KSA1150 • Collector Dissipation Pc“ 300mW ABSOLUTE MAXIMUM RATINGS TA- 2 5 t Characteristic Symbol Collector-Base Vottage Collector-Emttter Voltage Emitter-Base Voltage

BLV32F

Contextual Info: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz

BLV32F

Abstract: BLV32
Contextual Info: BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz

bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum

Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75

bu808dfi

Abstract: transistor BU808DFI
Contextual Info: r z z s g s t h o m s o n ^D g[R] [iL[iigTr^(Q iD i B U 8 0 8 D FI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . U.L. RECOGNISED ISOWATT218 PACKAGE

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage V e BO 6.0 Vdc Collector Current — Continuous

lc 5013

Contextual Info: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • HIGH SPEED SWITCHING : tf = 0.1us Typ • WIDE SOA ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emltter Voltage Rating Unit VcBO 800 V CEO 500

BU2520DX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

2SC1740S

Abstract: 2sc low noise 2SC1740S transistor 2sa933as TRANSISTOR npn
Contextual Info: 2SC1740S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • low collector saturation voltage, typically VCE(sat) - 0.04 V at lc/lB = 10 mA/1 mA • • low output capacitance, typically Cob = 2.0 pF low noise, typically NF = 1 dB at

NTE2593

Contextual Info: NTE2593 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage: V BR CEO = 2100V Min D Low Output Capacitance D Wide ASO Range D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V

NTE2592

Contextual Info: NTE2592 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CBO = 2000V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V

NTE2588

Contextual Info: NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V BR CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

NTE2540

Abstract: 600V NPN 2A
Contextual Info: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

pin voltage of ic 393

Contextual Info: SENSITRON SEMICONDUCTOR SHD444001 TECHNICAL DATA DATA SHEET 224, REV – Formerly part number SHD4461 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN A PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .

MX0912B350Y

Contextual Info: Data sheet status Preliminary specification date of Issue June 1992 P H IL IP S MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE ]> INTERNATIONAL • 7110ûSb GD4b354 ÔÛT « P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

TRANSISTOR BU2520DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

NTE2583

Abstract: NTE258
Contextual Info: NTE2583 Silicon NPN Transistor High Speed Switching Regulator Features: D High Breakdown Voltage and High Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V