TRANSISTOR 2204 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

BAL0204-125

Contextual Info: GAE GREAT AMERICAN ELECTROINCS BAL0204-125 Silicon NPN high power VHF transistor BAL0204-125 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communications equipment (220-400 Mhz frequency band) for radio links

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

TIC 136 Transistor

Abstract: mrf412
Contextual Info: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier

BTB1424L3

Abstract: BTD2150L3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848L3 Issued Date : 2004.10.07 Revised Date : 2204.11.15 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150L3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics

c237p

Abstract: GPe600 equivalent of SL 100 NPN Transistor 2wl1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 600 W ATTS LINEAR 30 M Hz RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r h ig h -vo lta g e a p p lica tio n s as a h ig h -p o w e r lin e a r a m p lifie r

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

2SA1396

Abstract: 2SC3568 T108 TS33
Contextual Info: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS

transistor D 2624

Contextual Info: MOT OROL A SC XSTRS/R 4bE D F • b3b725H 0GT4b4b Ô « N O T t T -3 3 -C R M O TO ROLA SEMICONDUCTOR MRF427 TECHNICAL DATA MRF427A The R F Li ne 25 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r high-voltage a p p lic a tio n s as a high -p o w e r

2SC3616

Abstract: PA33 ScansUX881
Contextual Info: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA

UPA79C

Abstract: PA79C uPA79 til 31a RA8040 JS 2204 hfe 4538 w0422 vtc 082 J2/JS 2204
Contextual Info: NEC a m + T ix f* Com pound Transistor A V PA79C -y°\ y ? Y=7^'<^ S NPN Silicon Epitaxial Transistor Array Mini Printer Driver It/r'fX- Yfrbtihl E S & S Ä ÿ ¿¿PA79C i, N PN ÿ i ) 3 > ( - 7 > ÿ X ^ i / <J ïvïICit Ltz \'ÿ>-J*?7l"(Tto ÎÜ * fâ W ' Œ * i ® < MOS IC c o m ijffi- ^ T - itS lO O m A S f i O t f ÿ

130001 power transistor

Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
Contextual Info: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages

pepi c

Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
Contextual Info: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r

RN2206

Abstract: RN2201 RN1201 RN1206 RN2202 RN2203 RN2204 RN2205
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design

RN2202

Abstract: RN1201 RN1206 RN2201 RN2203 RN2204 RN2205 RN2206 transistor 2204 transistor 2206
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design

Contextual Info: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN2202

Abstract: RN2203 RN1201 RN1206 RN2201 RN2204 RN2205 RN2206 transistor 2204
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

transistor 2206

Abstract: transistor 2204 RN2206 equivalent transistor rn2201
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design

transistor 2204

Abstract: SRA2204M
Contextual Info: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

transistor 2204

Contextual Info: SRA2204M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

transistor 2204

Abstract: rn2202
Contextual Info: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

HBC556

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2001.06.15 Page No. : 1/3 HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features