TRANSISTOR 210 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

TV power transistor datasheet

Abstract: power transistor 2SD2599 equivalent 2SC5411 transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855
Contextual Info: Part Number Product Category Application Scope 2SC5280 Horizontal Deflection Output Power Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor

TRANSISTOR B 834

Abstract: JE210 Transistor 834 transistor C 834 pnp transistor
Contextual Info: rz7 SGS-THOMSON Ä 7 # ssnei m eraM es m j e 210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain

FC155

Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for

FC155

Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one

transistor marking DG

Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
Contextual Info: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: Ordering number:EN5099 FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features Package Dimensions • Composite type with NPN transistor and a PNP transistor contained in the conventional CP package,

2SA1699

Abstract: 2SC4270 FC154
Contextual Info: Ordering number:EN5099 FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features Package Dimensions • Composite type with NPN transistor and a PNP transistor contained in the conventional CP package,

BFR540

Abstract: MSB003 BFR540 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a

BFG135 amplifier

Abstract: BFG135 BFG135 - BFG135 MBB300
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor

mda324

Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in

NTE106

Contextual Info: NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V

M54577P

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

BFR540

Abstract: MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a

6R380C6

Abstract: CoolMOS Power Transistor 6R380C6 g1 TRANSISTOR SMD MARKING CODE SMD mosfet MARKING code C6 CoolMOS Power Transistor SMD TRANSISTOR MARKING code TC IPA60R380C6 TRANSISTOR SMD MARKING CODE IPB60R380C6 IPD60R380C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.0, 2009-08-27 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

marking dk sot-89

Abstract: 2SC4672L-AB3-R dk SOT89 2SC4672 UM MARKING SOT89 transistor dk 50 2SC4672-AB3-R dk SOT-89 SOT-89 marking DK marking DK sot89
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SC4672 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION 1 The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at

5R380CE

Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXCT6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A

BFR106

Abstract: MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is