TRANSISTOR 2025 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

20258

Abstract: IEC-68-2-54 1301P
Contextual Info: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

Contextual Info: BLP8G21S-160PV Power LDMOS transistor Rev. 1 — 8 August 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance of half device at Tcase = 25 C in a common source class-AB production test

Contextual Info: BLP8G21S-160PV Power LDMOS transistor Rev. 2 — 19 December 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test

Contextual Info: BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test

d1941

Abstract: NP161N04TUG MP-25ZT 161N04
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B

MJE13001

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R

MJE13001

Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B

MJE-13001

Abstract: MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B

mje13001

Abstract: MJE-13001 TRANSISTOR 2025 MJe13001 TRANSISTOR npn 600v to92 transistor mje13001 npn transistor 400V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ 1 FEATURES SOT-89 * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A 1 TO-92 „ ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

13005 TRANSISTOR

Abstract: 13005 TRANSISTOR npn transistor 13005 transistor E 13005 13005 13005 s transistor d 1710 13005 2 13005 power transistor HSiN Semiconductor Pte
Contextual Info: 13005 Transistor NPN HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-Q-x-AB3-A-R

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

13003 TRANSISTOR

Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte
Contextual Info: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MJE-13001

Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R

MJE-13001

Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY