TRANSISTOR 2015 Search Results

2015M

Abstract: 2015M-2
Contextual Info: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed

2322-712

Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor BFR91

Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
Contextual Info: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial

Contextual Info: AL5802 ADVANCE INFORMATION NEW PRODUCT 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Description Pin Assignments The AL5802 combines a high gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. Top View The LED current is set by an external resistor connected from REXT

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

DS30514

Contextual Info: DPBT8105 1A PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating Complementary Version Available DNBT8105

Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

K2X pnp

Abstract: MMBT4401_Q MMBT4401Q-13-F D marking PNP K2X SOT23
Contextual Info: MMBT4401 40V NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching

K2F transistor

Abstract: pnp k2f K2F DIODES K2F 9 K2F single Application of MMBT2907A K2F marking
Contextual Info: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching

DS31604

Abstract: DSS20200L
Contextual Info: DSS20200L LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage

DS31638

Abstract: DS3163 2DD2656-7
Contextual Info: 2DD2656 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage

Contextual Info: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier

Contextual Info: MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Ultra-Small Surface Mount Package   Epitaxial Planar Die Construction   Ideal for Low Power Amplification and Switching  Totally Lead-Free & Fully RoHS compliant Notes 1 & 2

k1R transistor

Abstract: MARKING CODE K1R SOT23 k1R diodes BC846A-BC848C BC847B MARKING k1 MARKING CODE K1m SOT23 BC846B BC848CQ-7-F bc848b transistor marking K1R
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856 – BC858 For switching and AF Amplifier Applications

N20 marking transistor

Abstract: marking N20 MARKING CODE n20
Contextual Info: DDTC R1 = R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Part Number R1, R2 (NOM) DDTC123EUA 2.2KΩ DDTC143EUA 4.7KΩ DDTC114EUA 10KΩ DDTC124EUA 22KΩ DDTC144EUA 47KΩ DDTC115EUA 100KΩ • • •

marking P20 SOT23

Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2

MARKING CODE n20

Abstract: DDTC144ECAQ-13-F N20 marking transistor marking n20
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

Contextual Info: TEPT4400 Vishay Semiconductors Ambient Light Sensor Description TEPT4400, photo transistor for ambient light sensor application, plays a key role in power savings strategies by controlling LCD display intensity and keypad backlighting of mobile devices and in industrial on/offlighting operation. It is sensitive to visible light much

marking code k1

Abstract: DMN3052L
Contextual Info: DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V

marking C17

Abstract: DCX144EUQ-7-F DCX114YUQ-13-F DCX114YU DCX (xxxx) K
Contextual Info: DCX xxxx U SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free & Fully RoHS compliant (Note 1)

PNP DARLINGTON ARRAYS

Abstract: uln series ULN pnp uln 2803 relay driver ic pnp darlington array ULN 2803 relay driver ic 14 PIN IC ULN 2003 ic. uln 2003 pnp darlington array ic uln 2032A
Contextual Info: SPRAGUE INTERFACE INTEGRATED CIRCUITS SERIES 2000 and 2800 DARLINGTON ARRAYS These arrays high-voltage, are h igh -cu rre nt com prised of seven D arlington or e ight transistor silicon NPN Darlington pairs on a co m m o n m o n o lith ic substrate. units feature

DMP3056

Contextual Info: DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • Low RDS ON : • 45mΩ @VGS = -10V • 65mΩ @VGS = -4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability