TRANSISTOR 1J Search Results

BUX20

Abstract: bux 716 transistor BUX
Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

MMBT2369

Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Contextual Info: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol

transistor smd 1E

Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
Contextual Info: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

PH3134-75S

Contextual Info: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

transistor j117

Abstract: j76 transistor CC-36 J1171 J117
Contextual Info: AfaCCM W an A M P company Radar Pulsed Power Transistor, 75W, 1jis Pulse, 10% Duty 3.1-3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry

Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor M arking CMBT2369 = 1J PACKAGE OU TLINE DETAILS A LL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.48 038 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 2.6 1.4 1.2 2.4 R0.1 CÔÔ4T

100C

Abstract: BUK564-200A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

BUK541

Abstract: BUK541-100A BUK541-100B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

LD25C

Abstract: GS12-16
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

BLX93A

Contextual Info: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe

BCV61

Abstract: BCV61A BCV61B BCV61C BCV62
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING

Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for

BUK856-450IX

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener

transistor marking 551

Abstract: E551 1N MARKING marking code SAL sot-23
Contextual Info: KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ^ 2 S V Characteristic Symbol Collector-Base Voltage Collactor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

bi 370 transistor

Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
Contextual Info: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o

Contextual Info: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION

PMBT2369

Abstract: "npn switching transistor" 65 marking sot23 Marking 02 SOT23 marking A1 TRANSISTOR marking code 10 sot23 TR PMBT2369
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBT2369 NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN switching transistor PMBT2369 FEATURES PINNING • Low current max. 200 mA

2SC3056

Contextual Info: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor