TRANSISTOR 1GS Search Results

transistor marking code 325

Abstract: BSP110 marking r8v
Contextual Info: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer

2SK425

Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
Contextual Info: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <

K545

Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Contextual Info: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

Contextual Info: KSR1103 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, RJ=22KQ) • Complement lo KSR2103 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )

Contextual Info: TOSHIBA 2SK3403 n TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE -MOS V 2SK3403 TENTATIVE SWITCHING REGULATOR APPLICATIONS UNIT:mm • Low Drain - Source ON Resistance: R d s (ON) = 0-29 H ( Typ.) • High Forward Transfer Admittance : |YfS| = 5.8 S ( Typ.)

YTFP451

Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: YTFP451 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED.HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,OC-OC CONVERTER AND MOTOR U nit in na DRIVE APPLICATIONS. 1&9MAX. m FEATURES: • Low Drain-Source ON Resistance :

OF TRANSISTOR 2N5485

Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486
Contextual Info: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors

YTF821

Contextual Info: YTF821 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS U n i t in ram HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC C ONVERTER AND MOTOR 1 0.3 MAX. j2(3.6±0.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance

2SK372

Contextual Info: T O S H IB A 2SK372 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK372 FOR AUDIO AM PLIFIER, ANALOG-SWITCH, CONSTANT CURRENT AND U nit in mm IMPEDANCE CONVERTER APPLICATIONS 4.2 M AX. High Breakdown Voltage : V q b s = —40V High Input Impedance

AYN TI W

Abstract: iGSS 100nA Vgs 0v
Contextual Info: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

2SK1487

Abstract: s20k 1d 1107 s20k 250
Contextual Info: 2SK1487 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE {»-MOSm-5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 15.9MUC. 0 3 .2 ± o 2 FEATURES: • Low Drain-Source ON Resistance : RDS 0N) = 0.64Q (Typ.)

smd transistor marking dj

Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
Contextual Info: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

2SK33

Abstract: m745
Contextual Info: SE P 2 5 '0 0 06:01 »CCT-FftX» HNO:05250258 < t a a lK ^ R^67361 M745 [A lt.] » 1 5 /0 1 / OUT:0001 T O S H I B A 2SK3399 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE * -MOSV 2SK3 3 9 9

transistor buz 19

Abstract: diode zd 12 diode zd 22 JS 8 diode
Contextual Info: SIEMENS BUZ 104SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS b f f DS on Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Q P-DSO-28 C67078-S. . . . . . .

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OS i i YTFP251 H I GH S P E E D , H I G H CURRENT SWI TCHI NG A P P L I C A T I O N S . INDUSTRI AL A PP LI CATI ON S CHOPPER R E G U L A T O R , D C - D C CONVERTER AND MOTOR _ U n i t

2SK1347

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1347 SILICON N CHANNEL MOS TYPE L2-7r-MOSni HIGH S P E E D .H IG H IN D U S TR IA L A P P LIC A T IO N S CURRENT S W ITCH ING A P P L I C A T I O N S . U n it R E L A Y D R I V E , M O T O R D R I V E AND D C - D C C O N V E R T E R A P P L I C A T I O N S .

MARKING SMD PNP TRANSISTOR R

Abstract: rca application notes cs 52015 datasheet voltage regulator sot 223 CS52015 IN4002 LT1086
Contextual Info: CS52015−1 1.5 A Adjustable Linear Regulator The CS52015−1 linear regulator provides 1.5 A with an accuracy of ±1.0%. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and

y14.5m

Abstract: 418E CS52015 CS52015-1 IN4002 LT1086
Contextual Info: CS52015-1 1.5 A Adjustable Linear Regulator The CS52015–1 linear regulator provides 1.5 A with an accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and

add 5201

Abstract: MARKING SMD PNP TRANSISTOR R amplifier 5.1 surrounding system circuit diagram AND8036 smd led datasheet sot 23 voltage regulator sot 223 why are electrolytic capacitors good than ceramic CS5201 IN4002 LT1086
Contextual Info: CS5201−1 1.0 A Adjustable Linear Regulator The CS5201−1 linear regulator provides 1.0 A with an output voltage accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. This regulator is intended for use as a post regulator and

CS5201

Abstract: IN4002 LT1086
Contextual Info: CS5201−1 1.0 A Adjustable Linear Regulator The CS5201−1 linear regulator provides 1.0 A with an output voltage accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. This regulator is intended for use as a post regulator and

418E

Abstract: CS5201 CS5201-1 IN4002 LT1086 y14.5m
Contextual Info: CS5201-1 1.0 A Adjustable Linear Regulator The CS5201–1 linear regulator provides 1.0 A with an output voltage accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. This regulator is intended for use as a post regulator and

LT1086

Abstract: 418E CS52015 CS52015-1 IN4002 AND8036
Contextual Info: CS52015-1 1.5 A Adjustable Linear Regulator The CS52015–1 linear regulator provides 1.5 A with an accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. The regulator is intended for use as a post regulator and

418E

Abstract: CS5201 CS5201-1 IN4002 LT1086
Contextual Info: CS5201-1 1.0 A Adjustable Linear Regulator The CS5201–1 linear regulator provides 1.0 A with an output voltage accuracy of ±1.0 %. The device uses two external resistors to set the output voltage within a 1.25 V to 5.5 V range. This regulator is intended for use as a post regulator and