TRANSISTOR 1F Search Results

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

BA1F4M

Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

transistor marking 1f

Abstract: CMBT5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

equivalent transistor smd 3 em 7

Abstract: CMBT5550 ts 4141 TRANSISTOR
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

smd transistor marking BL

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F

QM300HA-H

Abstract: qm500ha-h QM10HA-HB QM20HA-HB QM30HQ-24 QM100HC-M qm400ha-h QM20HA QM20HA-H QM600HA-24
Contextual Info: POWER MODULES • TRANSISTOR MODULES # T ra n s is to r m odules Sin g le arm Max, ratings Electrical characteristics Transistor section Type No, Veos (sus) fe fe (A) (A) Dtode section _ lc Pe m Transistor section hFE V oe (sat) ÍV) (/<sl Diode section)

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

marking IAY

Abstract: TC-2126
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN 1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters 2.8 ±0.2 O—W V 0 .65:8;U 1.5 R t = 2 2 k£2 Ri R2 = 4 7 kü

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product specification 2001 Sep 10 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BV PINNING • 300 mW total power dissipation

marking code 10 sot23

Abstract: BP317 PMBT5401 PMBT5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550 FEATURES PINNING

transistor number code book FREE

Abstract: PMBT5401 PMBT5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 21 Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550 FEATURES PINNING

BN1F4M

Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR BN1F4M The B N 1F4M is designed for use in medium speed switching PACKAG E D IM E N S IO N S circuit. FEATURE in m illim ete rs inches 4 .2 MAX. (0.1 6 5 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.

CMPT5551

Abstract: transistor NF marking code
Contextual Info: Central CMPT5551 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier

Contextual Info: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION

BUK436-1000B

Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PINNING-SOT186A PIN QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability,

BC847BV

Abstract: BC857BV Transistor marking code S
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product data sheet 2001 Sep 10 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES BC847BV PINNING • 300 mW total power dissipation PIN

Contextual Info: Central" CMPT5551 Sem iconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage am plifier