TRANSISTOR 1CS Search Results

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended tor use in horizontal deflection circuits of large screen colour television receivers.

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to

QM30DY-H

Abstract: QM30DY-HB
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750

2N404 transistor

Abstract: 2N404 VCE0-20V Germanium power
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

transistor Bc 580

Abstract: marking 1cs 847S transistor bc 100
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

transistor bc icbo nA npn

Abstract: 847S Q62702-C2372 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

2SD2604

Abstract: 5001T
Contextual Info: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

transistor bc 499

Abstract: 1CS K2 marking 1cs transistor Bc 580
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code

5b1 transistor

Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type

Contextual Info: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

847S

Abstract: VPS05604 marking 1cs
Contextual Info: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

MARKING 1cs

Contextual Info: BC847S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC846U/S

Abstract: BC846U
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

1DS sot363

Abstract: marking 1DS sot363
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

marking 1DS sot363

Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

h11e

Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

2N3820

Abstract: 2n3820 transistor to 92 case
Contextual Info: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.

2N6558

Abstract: 2N6557 2N6559
Contextual Info: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

MPQ2907

Abstract: c-300mA MPQ2906 1-B215
Contextual Info: Data Sheet MPQ2906 MPQ2907 PNP S IL IC O N QUAD TRANSISTOR S e m ic o n d u c to r C o rp . 145 Adams Ave., Hauppauge, N Y 11788 USA Phone 516 435-111 0 JEDEC T O - 116 CASE FAX (516) 4 3 5 -1 8 2 4 Manufacturers of World Class Discrete Semiconductors DESCRIPTION

d 3151

Abstract: marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s
Contextual Info: M IL -S -19500/17 8B N AVY 29 May 1964_ S u p e r s e d in g M IL -S -19500/178A (NAVY) 13 O ctober 1961 (See 6.2) MILITARY SPECIFICATION TRANSISTOR, PNP, CERMAMUM TYPF 2N11G5 1. hi SCOPE 1.1 Scop«.- This specification covers the d tU t. requirem ents (or a ijerm aniuin, PNP tra n sisto r and is