TRANSISTOR 160V 1.5A NPN Search Results

D1918

Contextual Info: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V

B1275

Contextual Info: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V

2SC1502

Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
Contextual Info: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity

Contextual Info: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity

d1857a

Abstract: D1857 BTD1857AJ3
Contextual Info: CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT BTD1857AJ3 Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :2009.02.04 Page No. : 1/6 160V 1.5A 310mΩ Description • High BVCEO • High current capability • Complementary to BTB1236AJ3

c4027

Contextual Info: Ordering number : EN2262F 2SA1552/2SC4027 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Converters, inverters, color TV audio output Features • • • High voltage and large current capacity

2sc3902

Abstract: 2sa1507 EN2101E
Contextual Info: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process

C4614

Contextual Info: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C

transistor E11

Contextual Info: TSD1858 Low Vcesat NPN Transistor TO-251 IPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 180V BVCEO 160V IC 1.5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.15 @ IC = 1A, IB = 100mA (Typ.) High BVCEO Part No.

2SA2005

Abstract: 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20
Contextual Info: 2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SC5511 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.

Contextual Info: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

transistor 160v 1.5a npn

Abstract: BUX11 250V transistor npn 2a transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX11 DESCRIPTION •Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Motor control ·Linear and switching industrial equipment

transistor 160v 1.5a npn

Abstract: BUV11 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV11 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain: hFE= 20(Min.) @IC= 6A APPLICATIONS ·Designed for high current, high speed, high power

BUX11

Abstract: LE17
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 „

2SD669AL

Abstract: 2SD669A ta7250 2SD669 transistor 2sd669 1.5A NPN power transistor TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 1 TO-126 TO-126C

T6C transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223 „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 1 1 2SB649/A TO-251 TO-252 1 1 TO-92NL TO-92 1 TO-126 „

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD669/A NPN SILICON TRANSISTOR BI POLAR POWER GEN ERAL PU RPOSE T RAN SI ST OR ̈ APPLI CAT I ON S * Low frequency power amplifier complementary pair with UTC 2SB649/A ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free

VCEO160V

Abstract: HS669A 14014B 2SD669A transistor 160v 1.5a npn
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD669A HS669A █ 主要用途 █ 外形图及引脚排列 作低频功率放大。 █ 极限值（Ta=25℃） TO-126 T stg ——贮存温度………………………………… -55~150℃

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS 1 1 SOT-89 SOT-223 1 1 TO-92 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92NL 1 1 TO-126 TO-126C 1 1 TO-251

transistor 669A

Abstract: H669A 2SD669AHS669AH669A C117AJ-00 669A H669 C117A 2SD669A HS669A transistor 160v 1.5a npn
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2

transistor 669A

Abstract: H669A 2SD669AHS669AH669A 669A 2SD669 2SD669A H669 C080BJ-00 transistor 160v 1.5a npn HS669A
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 669A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2

2SD669Al

Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR „ APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 APPLICATION * Low frequency power amplifier * Complementary pair with UTC 2SB649/A SOT-89 *Pb-free plating product number: 2SD669/AL ORDERING INFORMATION