TRANSISTOR 15C Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

FET TH 469

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

mb060

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

12w 5d

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES

k 246 transistor fet

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance and has

FAH diode

Abstract: diode marking FAH transistor marking 15c
Contextual Info: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source.

10160-001

Abstract: std motor G3202 00002EE0 g3425
Contextual Info: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

Contextual Info: FZ 800 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1600 V 800 A lc Thermal properties R th JC DC, pro Baustein / per module 0,020 °C/W R th C K pro Baustein / per module

Contextual Info: FZ 800 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,020 °C/W R th J C Elektrische Eigenschaften Electrical properties V ces Maximum rated values 1600 V 800 A R th C K 150 °C - 40 / + 150 °C

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC741

Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

TL 650 ht

Abstract: BUK793-60A d0ss BUK7y3-60A buk793 vmk 5 pin
Contextual Info: Philips Com ponents Data sheet status P re lim in a ry s p e c ific a tio n March 1991 date of issue BUK793-60A PowerMOS transistor SensorFET PHILIPS INTERNATIONAL fa , SbE J> m — GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

2SC3001

Abstract: mitsubishi vcb
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3001 NPN EPITAXIAL PL AN AR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 0 1 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F pow er amplifier applications. FEATURES •

transistor EN 13003 A

Contextual Info: 15C02MH Ordering number : EN7354B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02MH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features

transistor EN 13003 A

Abstract: transistor EN 13003 transistor EN 13003 C IT05047 7353-1 transistor PC 13003 TRANSISTOR application
Contextual Info: 15C02CH Ordering number : EN7353B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features

transistor EN 13003 A

Contextual Info: 15C02CH Ordering number : EN7353B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 15C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency amplifer, high-speed switching, small motor drive Features