TRANSISTOR 1385 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

BC868

Abstract: BC868-25 marking Code philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 2003 Dec 02 2004 Nov 08 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BC868

BC868

Abstract: BC868-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC868 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BC868 FEATURES

200w power amplifier circuit diagram

Abstract: AN1385 LDMOS digital ISL21400 MRF9080
Contextual Info: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

delay line ms-19

Abstract: D 1414 transistor HCPL 8200 HSSR-8060 HCPL-0703 8060 transistor
Contextual Info: q i Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number 300 mil DIP 6N135 HCPL-0500 HCNW135 / 6N136 HCPL-0501 HCNW136 / HCPL-4502I1] HCPL-0452M1 HCNW4502I1! / HCPL-4503H] HCPL-0453I1! HCNW450311! / HCPL-4504I1] HCPL-045411! HCNW450411!

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount

IRFM9240

Abstract: 2N7237 23XT
Contextual Info: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 JANTX2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary

PHC2300

Abstract: FET pair n-channel p-channel
Contextual Info: PHC2300 Complementary TrenchMOS logic level FET Rev. 04 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is

Contextual Info: S IE M E N S PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in T V sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F N 20 NPN

PHC2300

Abstract: 6 PIN case mos fet p-channel nxp phc2300
Contextual Info: SO 8 PHC2300 Complementary enhancement mode MOS transistors Rev. 05 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description One N-channel and one P-channel enhancement mode Field-Effect Transistor FET in a plastic package. This product is designed and qualified for use in computing,

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

zy smd transistor

Abstract: transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T
Contextual Info: SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SOT457 N-Channel

Contextual Info: SO T4 57 PMN25EN 30 V, 6.2 A N-channel Trench MOSFET Rev. 1 — 29 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

d30n02

Contextual Info: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V

D 1414 transistor

Abstract: HCPL 454 optocoupler 630 HCNW4506 OPTOCOUPLER 6N137 hcpl 8200 optocoupler a 4504 A 7860 Optocoupler HSSR-8060 2601 optocoupler
Contextual Info: Single Channel 1 MBd Transistor Output Optocoupler 6N135/6 Type Part Number Package Prop VDE Insulation CTR CMR – V/µs (VCM) 300 400 Delay VIORM UL = 1 min. Page mil mil If tPHL tPLH Min. Max. 1000 10000 15000 DIP SO8 DIP mA µs (max.) % % (10 V) (1.5 kV) (1.5 kV) 630 Vp 1414 Vp 2500 V 5000 V No.

Contextual Info: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V

Contextual Info: DATASHEET EPC1011 EPC1011 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 25 mW ID , 12 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure

EPC Gan transistor 1015

Abstract: EPC1015 EPC Gan transistor
Contextual Info: DATASHEET EPC1015 EPC1015 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 4 mW ID , 33 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure