TRANSISTOR 12V 1A DATASHEET NPN Search Results

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

transistor 12v 1A NPN

Abstract: fje5
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

j5304d

Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

ZXTN25012EZ

Abstract: TS16949 ZXTN25012EZTA ZXTP25012EZ
Contextual Info: ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation

transistor 12v 1A NPN

Abstract: ap15* regulator AP1502
Contextual Info: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL „ Features „ General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable

ap15* regulator

Abstract: "PWM regulator" AP1502 12v to 20v converter pwm ic 494
Contextual Info: AP1502 200KHz, 1A PWM Buck DC/DC Converter & 1 Linear CTRL „ Features „ General Descriptions - Provides two regulated voltages -one PWM Regulator Direct output or Drive NPN -one Linear Controller (Drive NPN or N-MOS) - Output voltage: 3.3V, 5V, 12V and adjustable

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

150a gto

Abstract: QS 100 NPN Transistor 200H KSC5603D
Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

J5603D

Abstract: FJI5603DTU MH 7404 200H FJI5603D
Contextual Info: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application C Features B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode

Contextual Info: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • • High Voltage and High Speed Power Switch Application Electronic Ballast Application C Features • • • B Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode

Contextual Info: L i r i Ç A E ï ï ! » TECHNOLOGY [_ow Dropout Regulator F€ ATU R € S The LT1185 uses a saturation-limited NPN transistor as the pass element. This device gives the linear dropout characteristics of an FET pass element with significantly

ZXTN25012EFL

Abstract: TS16949 ZXTN25012EFLTA
Contextual Info: ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 2A VCE(sat) < 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse

80V 1A NPN Transistor

Abstract: KSC1983
Contextual Info: KSC1983 KSC1983 High Gain Power Transistor TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units V VCEO Collector-Emitter Voltage

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
Contextual Info: Application Note 1491 ISL6721EVAL3Z: Resonant Reset Forward Converters for Low Power Applications Abstract Design Specifications Low cost, isolated power supplies with multiple outputs are common in many applications such as automotive, security monitoring, telecom, medical instruments, etc.

Contextual Info: KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSC5367 KSC5367 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage 1 TO-220 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367 HIGH VOLTAGE AND HIGH RELIABILITY • High speed Sw itching • W ide Safe O perating A rea • High C ollector Base Voltage ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO

KSC5367

Contextual Info: KSC5367 KSC5367 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSC5367F

Abstract: vbe 12v, vce 600v NPN Transistor
Contextual Info: KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSC1983

Contextual Info: KSC1983 KSC1983 High Gain Power Transistor TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units V VCEO Collector-Emitter Voltage

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367F HIGH VOLTAGE AND HIGH RELIABILITY • High speed Sw itching • W ide Safe O perating A rea • High C ollector Base Voltage TO -22 0 F ABSOLUTE MAXIMUM RATINGS S ym bol R a tin g C ollector Base Voltage

KSC5367F

Contextual Info: KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSC5367F

Contextual Info: KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted