12n50c3
Abstract: TRANSISTOR SMD MARKING CODE 7A TRANSISTOR 12N50C3 12n50c
Contextual Info: SPP12N50C3, SPI12N50C3 SPA12N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1
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spp12n50c3spi12n50c3spa12n50c3p-to220-3-31+7p-to262-3-1p-to220-3-1p-to-220-3-3112n50c3transistor smd marking code 7atransistor 12n50c312n50c
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12N50c
Abstract: 12N50C3 PG-TO263-3-2 SPB12N50C3 SPP12N50C3 a187v
Contextual Info: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances
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spb12n50c3pg-to263q67040-s464112n50c3+412n50cpg-to263-3-2spp12n50c3a187v
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12n50c
Abstract: DSA+1-16a
Contextual Info: SPB12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
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spb12n50c3pg-to263q67040-s464112n50c3+212n50cdsa+1-16a
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12N50C3
Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
Contextual Info: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2
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spp12n50c3spb12n50c3spi12n50c3spa12n50c3+9p-to220-3-31p-to262p-to263-3-2p-to220-3-112n50c3transistor 12n50c312n50cq67040-s4641transistor smd marking code 7a
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12N50C3
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1
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spp12n50c3spi12n50c3spa12n50c3p-to220-3-31+6pg-to220-3-31pg-to262-3-1pg-to220-3-1p-to220-3-1pg-to-220-3-3112n50c3
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12N50C3
Abstract: TRANSISTOR 12N50C3 SPW12N50C3 12N50C
Contextual Info: SPW12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
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spw12n50c3p-to247q67040-s458012n50c3+2transistor 12n50c312n50c
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TRANSISTOR 12N50C3
Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
Contextual Info: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances
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spb12n50c3p-to263-3-2q67040-s464112n50c3+2transistor 12n50c3spp12n50c3
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12N50C3
Contextual Info: SPW12N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances
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12N50C3
Abstract: PG-TO220-FP PG-TO220-3-31 SPA12N50C3 SPI12N50C3 SPP12N50C3 smd transistor 331
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated
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spp12n50c3spi12n50c3spa12n50c3pg-to220-3-31+8pg-to262-pg-to220p-to220-3-31p-to220-3-1pg-to-220-3-3112n50c3pg-to220-fpsmd transistor 331
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Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated
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spp12n50c3spi12n50c3spa12n50c3pg-to220-3-31+5pg-to262-pg-to220p-to220-3-31p-to220-3-1pg-to-220-3-31
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12N50C3
Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated
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spp12n50c3spi12n50c3spa12n50c3pg-to220-3-31+8pg-to262-pg-to220p-to220-3-31p-to220-3-1pg-to-220-3-3112n50c3sp000216322infineon marking
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12N50C3
Abstract: TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3
Contextual Info: SPP12N50C3, SPI12N50C3 SPA12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
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spp12n50c3spi12n50c3spa12n50c3p-to220-3-31+7p-to262-3-1p-to220-3-1p-to-220-3-3112n50c3transistor 12n50c312n50ctransistor smd marking code 7a
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12N50C3
Abstract: TRANSISTOR 12N50C3 SPI12N50C3 SMD TRANSISTOR MARKING code TC SPP12N50C3 TRANSISTOR SMD MARKING CODE 7A PG-TO220-3-31 SPA12N50C3 Q67040-S4578
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated FP PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated
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spp12n50c3spi12n50c3spa12n50c3pg-to220-3-31+10pg-to262-pg-to220p-to220-3-31p-to220-3-1pg-to-220-3-3112n50c3transistor 12n50c3smd transistor marking code tctransistor smd marking code 7aq67040-s4578
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12N50C3
Abstract: 12N50c
Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated
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spp12n50c3spi12n50c3spa12n50c3p-to220-3-31+7pg-to220-3-31pg-to262-3pg-to220-3-1p-to220-3-1pg-to-220-3-3112n50c312n50c
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265
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