TRANSISTOR 1222 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

T491D476M020AS

Abstract: TRANSISTOR SMD 2X K transistor j127 BLA0912-250 T491D226M020AS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA0912-250 Avionics LDMOS transistor Preliminary specification 2003 Oct 24 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA0912-250 PINNING - SOT502A FEATURES • High power gain

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain

k 246 transistor fet

Abstract: subthreshold logic
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

118-136 mhz

Abstract: sd1222-6 transistor rf vhf
Contextual Info: S G S'•TH O M SO N QSC I 7=1^237 D G Q G 17E 3 SOLID STATE MICROWAVE SD1222-6 JHOMSON-CSF COMPONENTS CORPORATION Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 15 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD 1222-6 is an epitaxial silicon NPN-planar transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

PBSS4320X

Abstract: PBSS5320X Transistor s44 MLE372
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 25 2003 Dec 15 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor

PBSS4320X

Abstract: PBSS5320X marking S45 MLE371
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 25 2003 Nov 27 Philips Semiconductors Product specification 20 V, 3 A PNP low VCEsat (BISS) transistor

250 B 340 smd Transistor

Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC2959

Abstract: 2SA1221 2SC2958
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power

6ES7222-1BH30-0XB0

Abstract: S7-1200 siemens cable connection s7 siemens simatic s7 power supply power supply LED 5w
Contextual Info: 6ES7222-1BH30-0XB0 Page 1 Product data sheet 6ES7222-1BH30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 16 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection

1223 digital transistor

Abstract: UNR1221 UNR1222 UNR1223 UNR1224
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor ● ● ● • UNR1221 UNR1222 UNR1223 UNR1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (1.0) 0.45±0.05 0.55±0.1 3 2 (2.5) Parameter Symbol

Contextual Info: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS

1223 digital transistor

Abstract: UN1222 UN1223 UN1221 UN1224
Contextual Info: Transistors with built-in Resistor UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 1.5 ● ● ● R2 2.2kΩ 4.7kΩ 10kΩ 10kΩ • Absolute Maximum Ratings 3 Symbol Ratings Unit VCBO 50 V Collector to emitter voltage

toshiba ta 1222

Abstract: TRANSISTOR 1221 RN1223
Contextual Info: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER

UNR1221

Abstract: UNR1222 UNR1223 UNR1224
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 For digital circuits • Features ● ● ● ● ■ 1.0 0.4 7 R 0. UNR1221 UNR1222 UNR1223 UNR1224 4.1±0.2 0.85 Resistance by Part Number

1223 digital transistor

Abstract: UNR1222 UNR1221 UNR1223 UNR1224
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor 2.5±0.1 6.9±0.1 ● ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UNR1221 UNR1222 UNR1223 UNR1224 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ

Contextual Info: KSB907 PNP SILICON DARLINGTON TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • • High DC C urrent Gain Low C ollecto r E m itter Saturation Voltage Built in a D am per Diode at E-C D arlingt on TR C om plem ent to KSD 1222 ABSOLUTE MAXIMUM RATINGS

low voltage output NPN silicon epitaxial planar

Abstract: ta 1223 833H-1C-C-12VDC SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor UNR1221 UNR1222 UNR1223 UNR1224 1223 digital transistor
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor (1.0) (1.5) R 0.9 ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 2.4±0.2 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (0.85) 0.55±0.1 3 Absolute Maximum Ratings (Ta=25˚C)

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog