TRANSISTOR 1211 Search Results
TRANSISTOR 1211 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 |
|
NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR 1211 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
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Original |
bfg135ot223cgy2020gsca50+4 | |
BFR540
Abstract: MSB003
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Original |
bfr540125006/03/pp16msb003 | |
BFG35Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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bfg35ot223msb002125006/03/pp16 | |
BFG198Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a |
Original |
bfg198ot223msb002cgy2020g+2 | |
BUJ103AX
Abstract: BP317 BU1706AX
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Original |
buj103axsca60135104/240/02/pp12bp317+1 | |
BP317
Abstract: BU1706AX BUJ204AX
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buj204axsca60135104/204/02/pp12bp317+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
Original |
buj103ao220absca60135104/240/02/pp12 | |
BUJ204AContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
Original |
buj204ao220absca60135104/240/02/pp12 | |
str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
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m3d067bf859o-202mbh794+11 | |
transistor BUJ100
Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
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buj100transistor buj100cfl circuitscfl self-oscillating+6 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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OCR Scan |
2sb504kpl 30092sb502bly34+6 | |
339 marking code SMD transistor
Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
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Original |
m3d425pdta114eefsc-89ot490+9 | |
PDTA124XE
Abstract: PDTC124
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Original |
m3d173pdta124xesc-75ot416+4 | |
PHC20306
Abstract: BP317 MS-012AA MAM118
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phc20306sc13bot96-1sca54+4 | |
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Philips electrolytic 106 screw
Abstract: STR aluminium electrolytic capacitor
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OCR Scan |
rx1214b350ysca53127147/00/02/pp12philips electrolytic 106 screw+1 | |
sot416 marking code 26Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES |
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m3d173pdta123jemam345sc-75+4 | |
PDTC143XE
Abstract: PDTA143XE
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m3d173pdtc143xemam346sc-75+4 | |
BY206
Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
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Original |
m3d088bry61mgl167mgc421+7 | |
TSP 817
Abstract: BUK9830-30 PHT6N03LT
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pht6n03ltsc13aot223sca56+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES |
Original |
m3d173pdtc123jesc-75ot416+4 | |
MARKING SMD pnp TRANSISTOR ecContextual Info: DISCRETE SEMICONDUCTORS PDTC124XEF NPN resistor-equipped transistor Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor |
OCR Scan |
pdtc124xefsca645002/00/02/pp8marking smd pnp transistor ec | |
BC337
Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
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Original |
buk107-50dssc13asca54137087/1200/02/pp12+5 | |
PDTC123ET
Abstract: PDTA123ET
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m3d088pdta123etpdtc123etsca55+1 | |
MX0912B351YContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A |
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mx0912b351yot439asca53127147/00/02/pp12 | |