TRANSISTOR 1207 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2iy transistor

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

2N5154U3

Abstract: 2N5152U3 SMD-05
Contextual Info: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

Contextual Info: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

JANS2N5154

Abstract: 2N5154U3
Contextual Info: JANS 2N5152L and JANS 2N5154L Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2N5154

Abstract: 2N5154U3 MIL-PRF-19500 2N5154
Contextual Info: JANS 2N5152 and JANS 2N5154 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152 and 2N5154 silicon transistor devices are military Radiation

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Philips Semiconductors Preliminary specification bbSB'lBl DOBSlbD TST H A P X 2 GHz RF pow er transistor BLT10 N AMER PHILIPS/DISCRETE b'lE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation in handheld radio equipment at

SOT103

Abstract: transistor SOT103 transistor 1207 "RF Power Transistor" blt10 MSB037 RF Transistor reference SOT-103 5 GHZ TRANSISTOR
Contextual Info: , , Philips Semiconductors Preliminary specification bbSBTBl D03SlhD TST M A R X « — — “ 2 GHz RF power transistor — — BLT10 N Ar,ER PHILIPS/DISCRETE b'iE D DESCRIPTION NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

Contextual Info: DS7830/DS8830 tß National Semiconductor DS7830/DS8830 Dual Differential Line Driver General Description Features The QS7830/DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs al­

DS7830J

Abstract: C1996 DS7830 DS7830W DS8830 DS8830N J14A N14A DS8730 DS7830J-883
Contextual Info: DS7830 DS8830 Dual Differential Line Driver General Description Features The DS7830 DS8830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems

2N3057A

Contextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

Contextual Info: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

transistor 1207

Abstract: R1207
Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)

Contextual Info: T O SH IB A RN1207-RN1209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1207, RN 1208, RN 1209 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design

i22k

Abstract: KSR1207 KSR2207
Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=22K£1, R2=47K£1) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

EN1207

Abstract: 2SC3277 EN1207A 2sc3277 transistor
Contextual Info: Ordering number:EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high current. · Wide ASO. · Fast switching speed. unit:mm 2022A [2SC3277] 1 : Base

TCRT500L

Abstract: TCRT5000 sensor circuit ozone sensor Reflective Optical Sensor TCRT5000
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The

tcrt500l

Abstract: Reflective Optical Sensor TCRT5000 TCRT5000L TCRT5000
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The

JANS2N3700UB

Abstract: microsemi ub package tape reel
Contextual Info: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.

Contextual Info: SRC1207M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRC1207M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process