TRANSISTOR 1107 Search Results

RIL3N

Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: N AMER PHILIPS/DISCRETE bSE I> • 0021711 TTfl APX BLY91C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

typ71

Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

ld2sc

Contextual Info: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

BUY89

Contextual Info: N AflER PHILIPS/DISCRETE SSE D bt.s3T3i o o m a s t BUY89 J V T*-3 3 -1 3 SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a TO-3 envelope especially intended for use in A C motor control systems from three-phase mains.

CM05X5R225M06A

Abstract: RP132K001D RP132H001D RP132H RP132S001D CM105X5R475M06AB CM05X5R225K06A RP132K
Contextual Info: RP132x SERIES Low on Resistance / Low Voltage 1A LDO NO.EA-265-110727 OUTLINE The RP132x Series are voltage-regulators with a built-in low ON-resistance transistor and output current is 1A capability. These ICs have two versions: fixed output voltage type and externally adjustable output voltage type.

KSR1107

Abstract: KSR2107
Contextual Info: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to K S R 1107 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from

gs 1117 ax

Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Contextual Info: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range

Contextual Info: TCRT1000/TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 Description TCRT1010 The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light.

TCRT1000

Abstract: TCRT1010 kodak* Neutral Test Card
Contextual Info: TCRT1000/TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output TCRT1000 Description TCRT1010 The TCRT1000 and TCRT1010 are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light.

TCRT500L

Abstract: TCRT5000 sensor circuit ozone sensor Reflective Optical Sensor TCRT5000
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The

tcrt500l

Abstract: Reflective Optical Sensor TCRT5000 TCRT5000L TCRT5000
Contextual Info: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT5000 TCRT5000L The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The

IR 21065

Abstract: TCRT1010S
Contextual Info: TCRT1010S Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description TCRT1010S TCRT1010S reflective sensor includes an infrared emitter and a phototransistor in a leaded package which blocks visible light. Features • Package type: leaded, short lead cut

SPRAGUE 30D

Contextual Info: TypeTE VISHAY Vishay Sprague Aluminum Capacitors L ittl -lytic Electrolytics FEATURES • Proven dependable performance in industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of

CNY70

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

sensor cny70

Abstract: CNY70 ir sensing circuit using CNY70
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •

Contextual Info: TOSHIBA RN1107F-RN1109F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107F, RN1108F, RN1109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 • • • • With Built-in Bias Resistors

TCRT1010

Abstract: TCST2202 Reflective Optical Sensor TCRT5000L
Contextual Info: TCRT1000, TCRT1010 Vishay Semiconductors Reflective Optical Sensor with Transistor Output FEATURES TCRT1000 TCRT1010 • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 4 x 2.5 • Peak operating distance: 1 mm