TRANSISTOR 1060 Search Results

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

foto sensor

Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

BUK457-500B

Abstract: PHP8N50 PHW9ND50 FREDFET
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge

BLA1011-200

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

BLY93A

Abstract: D 1062 transistor Trimmer 10-60 pf IEC134 transistor ao yl 1060
Contextual Info: N AMER PHILIPS/DISCRETE 86D GbE D 01968 D Bi b 353^31 001450t. 2 T^~23-f( " “ BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r use inclass-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

PHP8N50

Abstract: BUK457-500B
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling

200B

Abstract: BLA1011-2 MGU487 gp 516
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2001 Nov 05 2002 Jun 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A

BUK457-500B

Abstract: PHP8N50 PHW9N50
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain

Contextual Info: Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 Dec 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance

BFU540

Abstract: SiGe POWER TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 FEATURES PINNING • Very high power gain

BLA1011-10

Abstract: 200B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain

Contextual Info: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data 12.52 12.12 optical axis 6.68 6.28 Sensor 0.6 0.4 2 9.0 8.2 2.54 Circuitry 3 1 4 GPX06992 fpx06992

Contextual Info: N AUER PHILIPS/DISCRETE bSE 1> • bb53S31 002clbbb 41S HIAPX I BLY87C A _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and

Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

IC 3130

Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

Contextual Info: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly

IC 3130

Abstract: 4110 P525 Q62702-P5250 GEOY6976
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

11-3C1

Abstract: transistor 9036 tlp290 TLP290-4
Contextual Info: TLP290 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290 Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290 consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate directly

SMD 0508

Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: