TRANSISTOR 1016 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

10160-001

Abstract: std motor G3202 00002EE0 g3425
Contextual Info: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable lor surface mounting. Using ’trench’ technology the device

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

PBR941

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y iI T PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

B 1566 Transistor

Abstract: EW 9016 Transistor B 1566
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor

Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

diode b24a

Abstract: diode v3e Mitsubishi transistor QM600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

907 TRANSISTOR smd

Abstract: smd transistor 547 smd transistor code 314 703 TRANSISTOR smd TRANSISTOR SMd jg data T3D 97 SMD CODE SOT89 lc T3D 63 BFQ149 transistor smd pnp 526
Contextual Info: e , „ Philips Semiconductors • bbSBTBl QQESIOM TT4 _ N A*£F? P M I L T P s T p i s C R E T E h a p x b7E Product specification D PNP 5 GHz wideband transistor DESCRIPTION £ BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in

capicitor

Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Contextual Info: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride

E101 FET

Abstract: transistor E101
Contextual Info: PRELIMINARY PTF 10160* 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The 10160 is an input and output matched 85 watt LDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. This device operates at 53% efficiency with 15 dB of gain minimum. Full

G200

Abstract: 415 - 0930 capacitor 2200 uF siemens
Contextual Info: PTF 10162 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization

transistor TC-10

Abstract: 2al2 tcj 103 L200H LV 1016 2SC3093 LA 7113
Contextual Info: 2SC3093 NPN Triple Diffused Planar Type Silicon Transistor For Sw itch ing Regulator Use ★ High reverse voltago 800V min ★ High speed switching use. ♦Wide ASO '!>1016 • 4. VcftjÄBO O V . • • » tV Î ’X i f - • aso * < i i : V « 'J U ' t*.

10160A

Abstract: G200
Contextual Info: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

OZ 960

Abstract: G200
Contextual Info: PTF 10160 85 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

cgs resistor

Abstract: G200 85-watt DBX16
Contextual Info: PTF 10160 GOLDMOS Field Effect Transistor 85 Watts, 860–960 MHz Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability.

transistor c516

Abstract: c516 transistor bu108
Contextual Info: TBA920S J \ _ HORIZONTAL COMBINATION The TBA920 is a monolithic integrated circuit intended for television receivers with transistor, thyris­ tor, or tube-equipped output stages. It combines the following functions: - noise gated sync separator

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N