TRANSISTOR 1012 TO-3 PACKAGE Search Results

transistor 1012

Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220
Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

2SC3089

Abstract: en1012a EN10-12 high voltage fast switching npn 4A
Contextual Info: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base

Contextual Info: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6

Transistor AND DIODE Equivalent list

Abstract: 100-OHM 1084 transistor TO-78 package
Contextual Info: ISOCOM LTD CS 102 Gallium Arsenide Optocoupler in a TO-78 Package Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military applications . Devices supplied are approved to BS9400, and have

transistor 1012

Abstract: cs-102
Contextual Info: CS 102 Gallium Arsenide Optocoupler in a TO-78 Package Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C e.g. military applications . Devices supplied are approved to BS9400, and have

op amp ad645

Abstract: AD645AH analog devices AD METALIZATION PHOTOGRAPH AD645BH
Contextual Info: Low Noise, Low Drift FET Op Amp ANALOG DEVICES AD645 CONNECTION DIAGRAMS TO-99 H Package 8-Pin Plastic Mini-DIP (N) Package . CASE FEATURES Improved Replacement for Burr-Brown OPA-111 and OPA-121 Op Amp LOW NOISE 2 i*V p-p max, 0.1 Hz to 10 Hz 10 hV/VHz max at 10 kHz

TRANSISTOR c 5521

Abstract: 1000C 2600C ISQ204-77 1012 transistor
Contextual Info: ISQ204-77 OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT SCHEMATIC PACKAGE DIMENSIONS INCHES MM 1 16 2 15 3 14 20.32 19.32 7.62 4.0 3.0 0.5 13 0 max 3.0 4 13 0.5 3.35 0.26 2.54 5 12 6 11 7 10 8 7.0 6.0 9 1.2 DESCRIPTION OUTPUT TRANSISTOR The ISQ204-77 are optically coupled isolators

Contextual Info: 4N45 LOW INPUT CURRENT HIGH GAIN OPTOCOUPLERS PACKAGES ISOCOM LTD CIRCUIT 7.30 7.30 3.50 6.50 13.0o 0.4 3.0 2.7 0.26 6.5 7.62 1.20 2.54 0.5 13.0o DESCRIPTION The 4N45 is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PU4422 PU3122 PU4122
Contextual Info: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B

Contextual Info: 4N46 LOW INPUT CURRENT HIGH GAIN OPTOCOUPLERS PACKAGES ISOCOM LTD CIRCUIT 7.30 7.30 3.50 6.50 13.0o 0.4 3.0 2.7 0.26 6.5 7.62 1.20 2.54 0.5 13.0o DESCRIPTION The 4N46 is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and

2N918

Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574

Contextual Info: 66099 mu R A D IA TIO N T O L E R A N T O PTO C O U PLER OPTOELECTRONIC PRODUCTS DIVISION The collector is electrically connected to the case, Features c Meets or Exceeds M IL-S-19500 Radiation Requirements Current Transfer Ratio - 1 5 0% Typical 1000 Volts Electrical Isolation

TRANSISTOR 1015A

Abstract: N1033A n1033 transistor lrw N1013A N1027A N1004A N1011A
Contextual Info: 1 SIG N ETIC S D IG IT A L 1.000/10,000 S E R IE S ECL FU N C TIO N 2 O R Outputs w/Pulldowns _ _ _ . . 2 NOR Outputs w/Pulldowns P A R T NO. io to + ? r o P R O P A G A T IO N T O T A L POWER LO A D IN G D ELA Y D ISSIPA TIO N FAC TO R ruec typ. mW typ.

RJ23N3AA0PT

Abstract: 623H RJ23N3
Contextual Info: BACK RJ23N3AA0PT 1/2.7-type Interline Color CCD Area Sensor with 2 140 k Pixels RJ23N3AA0PT • Package : 16-pin shrink-pitch DIP [Plastic] P-DIP016-0500C Row space : 12.70 mm DESCRIPTION The RJ23N3AA0PT is a 1/2.7-type (6.65 mm) solidstate image sensor that consists of PN photodiodes and CCDs (charge-coupled devices). With

Contextual Info: TRANSISTOR OPTOCOUPLERS ISOCOM TIL191-71G 4 4.60 0.4 3.00 2 LTD PACKAGE 10.16 6.50 3 3.50 1 2.70 0.25 10-12 1.20 2.54 0.5 DESCRIPTION These devices are single, optocouplers. Composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin, gull wing options.

Contextual Info: TRANSISTOR OPTOCOUPLERS ISOCOM TIL191-11G 4 4.60 0.4 3.00 2 LTD PACKAGE 10.16 6.50 3 3.50 1 2.70 0.25 10-12 1.20 2.54 0.5 DESCRIPTION These devices are single, optocouplers. Composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices include 4 pin, gull wing options.

4011AE

Abstract: 4009A 4009ae HBF4011AE HBF4017AE hbf4049 HBF4049AE hbf4001 HBF4016AE CD4000AE
Contextual Info: SGS-ATES Semiconductors Digital I.C .'s-C O S /M O S Integrated Circuits -C O S /M O S HBF4000AE Series FEATURES V ery low pow er dissipation: 10 n W typ./gate package Equivalent to R C A CD40Q0AE series 10 ,xW ty p./MSI D E S C R IP T IO N T h e H B F4000 A E series is a complementary N and

NTE3083

Abstract: 3550VDC
Contextual Info: NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate

TSSO28

Abstract: transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS
Contextual Info: APPLICATIONS ICs for Consumer Electronics Rolf Laurien New tuner ICs TUA 6010/6110: One-chip solutions for slimline tuners Tuners for television sets, video recorders and satellite receivers have become progressively smaller in recent years. Most recently, the

C1685 transistor

Abstract: TRANSISTOR C1685 C2091 C1685 C1685 R transistor
Contextual Info: a fe ., DUAL PHOTOTRANSISTOR OPTOCOUPLERS s» OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS DESCRIPTION The MCT6X optoisolators have tw o channels for high density applications. For four channel applications, tw o-packages fit into a standard 16-pin DIP socket. Each

p 621 Opto coupler

Abstract: optocoupler 621
Contextual Info: SFH601 » •— Infineon TRIOS Phototransistor Optocoupler technologies DESCRIPTION The SFH601 is an optocoupler with a Gallium Ars­ enide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case

Contextual Info: E DUAL 1 I PHOTOTRANSISTOR OPTOCOUPLERS -1 U OPTOELECTRONICS MCT6 MCT62 MCT61 PACKAGE DIMENSIONS ft F ft & DESCRIPTION The MCT6X optoisolators have two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. Each

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V